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MTDN5820Z6 - Dual N-Channel Enhancement Mode Power MOSFET

Description

on-resistance and cost-effectiveness.

Features

  • Simple drive requirement.
  • Low gate charge.
  • Low on-resistance.
  • Fast switching speed.
  • ESD protected.
  • Pb-free lead plating and halogen-free package Equivalent Circuit MTDN5280Z6 Outline TDFN2×5-6L G：Gate S：Source D：Drain MTDN5820Z6 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C911Z6 Issued Date : 2013.11.28 Revised Date : Page No. : 2/9 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Breakdown Voltage.

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Datasheet preview – MTDN5820Z6

Datasheet Details

Part number MTDN5820Z6
Manufacturer CYStech
File Size 307.62 KB
Description Dual N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTDN5820Z6 Datasheet
Additional preview pages of the MTDN5820Z6 datasheet.

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Full PDF Text Transcription

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CYStech Electronics Corp. Spec. No. : C911Z6 Issued Date : 2013.11.28 Revised Date : Page No. : 1/9 20V Common Drain Dual N -Channel Enhancement Mode MOSFET MTDN5820Z6 BVDSS ID VGS=4.5V 20V 11A VGS=4.5V, ID=5.5A 6.0mΩ VGS=4.0V, ID=5.5A 6.0mΩ RDSON (TYP.) VGS=3.7V, ID=5.5A 6.2 mΩ VGS=3.1V, ID=5.5A 6.7 mΩ Description VGS=2.5V, ID=5.5A 7.8 mΩ The MTDN5820Z6 consists of two N-channel enhancement-mode MOSFETs in a single TDFN2×5-6L package, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TDFN2×5-6L package is universally preferred for all commercial-industrial surface mount applications.
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