MTDN5820Z6 Overview
VGS=2.5V, ID=5.5A 7.8 mΩ The MTDN5820Z6 consists of two N-channel enhancement-mode MOSFETs in a single TDFN2×5-6L package, providing the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TDFN2×5-6L package is universally preferred for all mercial-industrial surface mount applications.
MTDN5820Z6 Key Features
- Simple drive requirement
- Low gate charge
- Low on-resistance
- Fast switching speed
- ESD protected
- Pb-free lead plating and halogen-free package