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MTDN9922Q8 - Dual N-Channel Enhancement Mode Power MOSFET

Description

The MTDN9922Q8 provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.

Features

  • RDS(ON)=20mΩ@VGS=4.5V, ID=4A.
  • Simple drive requirement.
  • Low on-resistance.
  • Fast switching speed.
  • Dual N-ch MOSFET package.
  • Capable of 2.5V gate drive.
  • Pb-free lead plating package Equivalent Circuit MTDN9922Q8 Outline SOP-8 G：Gate S：Source D：Drain Ordering Information Device MTDN9922Q8 Package SOP-8 (Pb-free lead plating package) Shipping 3000 pcs / Tape & Reel Marking 9922ESS MTDN9922Q8 CYStek Product Specification CYSt.

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Datasheet preview – MTDN9922Q8

Datasheet Details

Part number MTDN9922Q8
Manufacturer CYStech
File Size 348.42 KB
Description Dual N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTDN9922Q8 Datasheet
Additional preview pages of the MTDN9922Q8 datasheet.

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Full PDF Text Transcription

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CYStech Electronics Corp. Spec. No. : C425Q8 Issued Date : 2007.12.06 Revised Date : 2011.03.21 Page No. : 1/7 Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET MTDN9922Q8 Description The MTDN9922Q8 provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Features • RDS(ON)=20mΩ@VGS=4.5V, ID=4A • Simple drive requirement • Low on-resistance • Fast switching speed • Dual N-ch MOSFET package • Capable of 2.
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