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MTDN9971Q8 - Dual N-Channel Enhancement Mode Power MOSFET

Description

The MTDN9971Q8 provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.

Features

  • RDS(ON)=60mΩ@VGS=4.5V, ID=2.5A.
  • Simple drive requirement.
  • Low on-resistance.
  • Fast switching speed.
  • Dual N-ch MOSFET package.
  • Pb-free package Equivalent Circuit MTDN9971Q8 Outline SOP-8 G:Gate S:Source D:Drain MTDN9971Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C415Q8 Issued Date : 2007.07.05 Revised Date : Page No. : 2/5 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Breakdown Voltage Gate-Source.

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Datasheet Details

Part number MTDN9971Q8
Manufacturer CYStech
File Size 429.65 KB
Description Dual N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTDN9971Q8 Datasheet
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CYStech Electronics Corp. Spec. No. : C415Q8 Issued Date : 2007.07.05 Revised Date : Page No. : 1/5 Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET MTDN9971Q8 Description The MTDN9971Q8 provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Features • RDS(ON)=60mΩ@VGS=4.5V, ID=2.5A • Simple drive requirement • Low on-resistance • Fast switching speed • Dual N-ch MOSFET package • Pb-free package Equivalent Circuit MTDN9971Q8 Outline SOP-8 G:Gate S:Source D:Drain MTDN9971Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No.
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