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MTDNK2N6 - Dual N-Channel Enhancement Mode Power MOSFET

Description

The MTDNK2N6 is a dual N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.

The SOT-26 package is universally preferred for all commercial-industrial surface mount applications.

Features

  • Simple drive requirement.
  • Low on-resistance.
  • Small package outline.
  • Pb-free package Equivalent Circuit MTDNK2N6.
  • with gate protection diode The following characteristics apply to both Tr1 and Tr2 Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @TA=25 °C (Note 1) Pulsed Drain Current (Note 2, 3) Total Power Dissipation @ TA=25 °C Linear Derating Factor Operating Junction.

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Datasheet preview – MTDNK2N6

Datasheet Details

Part number MTDNK2N6
Manufacturer CYStech
File Size 286.95 KB
Description Dual N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTDNK2N6 Datasheet
Additional preview pages of the MTDNK2N6 datasheet.

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Full PDF Text Transcription

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CYStech Electronics Corp. Spec. No. : C446N6 Issued Date : 2009.06.15 Revised Date : 2013.09.06 Page No. : 1/7 Dual N-CHANNEL ENHANCEMENT MODE MOSFET MTDNK2N6 BVDSS ID RDSON(MAX) 60V 0.51A 1.6Ω Description The MTDNK2N6 is a dual N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOT-26 package is universally preferred for all commercial-industrial surface mount applications.
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