Datasheet Summary
CYStech Electronics Corp.
Spec. No. : C059H8 Issued Date : 2017.04.25 Revised Date : Page No. : 1/ 10
N-Channel Enhancement Mode Power MOSFET
MTE100N10KRH8 BVDSS ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
RDS(ON)@VGS=10V, ID=2A
Features
- Low On Resistance
- Simple Drive Requirement
- Low Gate Charge
- Fast Switching Characteristic
- ESD protected gate
- Pb-free lead plating and Halogen-free package
100V 6.8A
3.0A 102mΩ(typ)
Symbol
G：Gate D：Drain S：Source
Outline
Pin 1
DFN5×6
Pin 1
Ordering Information
Device MTE100N10KRH8-0-T6-G
Package
DFN 5 ×6 (Pb-free lead plating and halogen-free package)
Shipping 3000 pcs / tape & reel
Environment...