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MTE130N20E3 - N-Channel Enhancement Mode Power MOSFET

Features

  • Simple Drive Requirement.
  • Low Gate Charge.
  • Fast Switching Characteristic.
  • RoHS compliant package BVDSS ID @ VGS=10V, TC=25°C RDS(ON)@VGS=10V, ID=9A 200V 18A 159 mΩ(typ) Symbol MTE130N20E3 Outline TO-220 G：Gate D：Drain S：Source GDS Ordering Information Device MTE130N20E3-0-UB-X Package TO-220 (RoHS compliant package) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant.

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Datasheet Details

Part number MTE130N20E3
Manufacturer CYStech
File Size 348.47 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTE130N20E3 Datasheet
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Full PDF Text Transcription

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CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTE130N20E3 Spec. No. : C966E3 Issued Date : 2015.05.06 Revised Date : Page No.
Published: |