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MTEF1P15L3 - P-Channel Enhancement Mode Power MOSFET

Features

  • Low Gate Charge.
  • Simple Drive Requirement.
  • Pb-free lead plating & halogen-free package Equivalent Circuit MTEF1P15L3 G:Gate D:Drain S:Source Outline SOT-223 D S D G Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ VGS=-10V, TC=25°C Continuous Drain Current @ VGS=-10V, TC=100°C Continuous Drain Current @ VGS=-10V, TA=25°C Continuous Drain Current @ VGS=-10V, TA=70°C Pulsed Dr.

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Datasheet Details

Part number MTEF1P15L3
Manufacturer CYStech
File Size 239.32 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTEF1P15L3 Datasheet
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Full PDF Text Transcription

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CYStech Electronics Corp. Spec. No. : C896L3 Issued Date : 2013.04.01 Revised Date : Page No. : 1/8 P-Channel Logic Level Enhancement Mode Power MOSFET MTEF1P15L3 BVDSS ID RDSON@VGS=-10V, ID=-1.4A RDSON@VGS=-6V, ID=-2A -150V -1.4A 0.64Ω (typ) 0.
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