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MTEF1P15Q8 Datasheet Preview

MTEF1P15Q8 Datasheet

P-Channel Enhancement Mode Power MOSFET

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MTEF1P15Q8 pdf
CYStech Electronics Corp.
Spec. No. : C896Q8
Issued Date : 2013.07.05
Revised Date : 2013.11.07
Page No. : 1/9
P-Channel Enhancement Mode Power MOSFET
MTEF1P15Q8
BVDSS
ID
RDSON@VGS=-10V, ID=-1.6A
RDSON@VGS=-6V, ID=-1A
-150V
-1.6A
650mΩ(typ)
700mΩ(typ)
Features
Simple drive requirement
Low on-resistance
Fast switching speed
Pb-free and Halogen-free package
Equivalent Circuit
MTEF1P15Q8
Outline
SOP-8
GGate
SSource
DDrain
Ordering Information
Device
MTEF1P15Q8-0-T3-G
Package
SOP-8
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTEF1P15Q8
CYStek Product Specification



CYStech
CYStech

MTEF1P15Q8 Datasheet Preview

MTEF1P15Q8 Datasheet

P-Channel Enhancement Mode Power MOSFET

No Preview Available !

MTEF1P15Q8 pdf
CYStech Electronics Corp.
Spec. No. : C896Q8
Issued Date : 2013.07.05
Revised Date : 2013.11.07
Page No. : 2/9
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Breakdown Voltage
Gate-Source Voltage
Continuous Drain Current @TA=25 °C
Continuous Drain Current @TA=70 °C
Pulsed Drain Current (Note 1)
Power Dissipation (Note 2)
TA=25 °C
TA=70 °C
Operating Junction and Storage Temperature Range
Symbol
BVDSS
VGS
ID
ID
IDM
PD
Tj ; Tstg
Limits
-150
±20
-1.6
-1.3
-6.4
3.1
2
-55~+150
Note : 1.Pulse width limited by maximum junction temperature.
2.Surface mounted on 1 in² copper pad of FR-4 board, t10s.
Unit
V
V
A
A
A
W
W
°C
Thermal Resistance Ratings
Thermal Resistance
Symbol
Maximum
Unit
Junction-to-Case
RθJC 30
Junction-to-Ambient (Note)
RθJA
40
Note : W when mounted on a 1 in2 pad of 2 oz copper, t10s; 125°C/W when mounted on minimum copper pad.
°C / W
Electrical Characteristics (Tc=25°C, unless otherwise noted)
Symbol
Min. Typ. Max. Unit
Test Conditions
Static
BVDSS
VGS(th)
-150 -
-
-2 -2.8 -3.5
V
VGS=0V, ID=-250μA
VDS=VGS, ID=-250μA
IGSS - - ±100 nA VGS=±20V, VDS=0V
IDSS
IDSS
-
-
-
-
-1
-10
μA
VDS=-120V, VGS=0V
VDS=-120V, VGS=0, Tj=125°C
RDS(ON) (Note 1)
-
-
650
700
800
910
mΩ
ID=-1.6A, VGS=-10V
ID=-1A, VGS=-6V
GFS (Note 1) - 2.6 - S VDS=-10V, ID=-1.4A
Dynamic
Ciss - 478 -
Coss
- 28 - pF VDS=-30V, VGS=0, f=1MHz
Crss - 12 -
td(ON) (Note 1&2)
-
8
-
tr (Note 1&2)
td(OFF) (Note 1&2)
-
-
6
20
-
-
ns
VDS=-75V, ID=-1A, VGS=-10V,
RG=1Ω
tf (Note 1&2)
-
4
-
Qg (Note 1&2)
-
6
-
Qgs (Note 1&2)
-
2
- nC VDS=-75V, ID=-1A, VGS=-10V
Qgd (Note 1&2)
-
1.4
-
MTEF1P15Q8
CYStek Product Specification


Part Number MTEF1P15Q8
Description P-Channel Enhancement Mode Power MOSFET
Maker CYStech
Total Page 9 Pages
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