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MTP2301S3 - 20V P-Channel Enhancement Mode MOSFET

Features

  • Advanced trench process technology.
  • High density cell design for ultra low on resistance.
  • Excellent thermal and electrical capabilities.
  • Compact and low profile SOT-323 package.
  • Pb-free lead plating and halogen-free package -20V -1.6A 75mΩ(typ. ) 113mΩ(typ. ) Equivalent Circuit MTP2301S3 Outline SOT-323 D G：Gate S：Source D：Drain S G Ordering Information Device MTP2301S3-0-T1-G Package Shipping SOT-323 (Pb-free lead plating and halogen-free p.

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Datasheet Details

Part number MTP2301S3
Manufacturer CYStech
File Size 578.29 KB
Description 20V P-Channel Enhancement Mode MOSFET
Datasheet download datasheet MTP2301S3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C322S3 Issued Date : 2013.08.29 Revised Date : 2018.10.17 Page No. : 1/8 20V P-Channel Enhancement Mode MOSFET MTP2301S3 BVDSS ID@TA=25°C, VGS=-4.5V RDSON(MAX)@VGS=-4.5V, ID=-1.6A RDSON(MAX)@VGS=-2.5V, ID=-1A Features • Advanced trench process technology • High density cell design for ultra low on resistance • Excellent thermal and electrical capabilities • Compact and low profile SOT-323 package • Pb-free lead plating and halogen-free package -20V -1.6A 75mΩ(typ.) 113mΩ(typ.
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