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MTP2301V3 - -20V P-CHANNEL Enhancement Mode MOSFET

Key Features

  • Advanced trench process technology.
  • High density cell design for ultra low on resistance.
  • Excellent thermal and electrical capabilities.
  • Compact and low profile TSOT-23 package.
  • Pb-free lead plating and halogen-free package BVDSS ID RDSON(MAX)@VGS=-4.5V, ID=-2.8A RDSON(MAX)@VGS=-2.5V, ID=-2A -20V -3.4A 79mΩ(typ. ) 116mΩ(typ. ) Equivalent Circuit MTP2301V3 Outline TSOT-23 D G G：Gate S：Source D：Drain S Absolute Maximum Ratings (Ta=25°C) Parameter.

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Datasheet Details

Part number MTP2301V3
Manufacturer CYStech Electronics
File Size 417.36 KB
Description -20V P-CHANNEL Enhancement Mode MOSFET
Datasheet download datasheet MTP2301V3 Datasheet

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Full PDF Text Transcription (Reference)

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CYStech Electronics Corp. -20V P-CHANNEL Enhancement Mode MOSFET Spec. No. : C322V3 Issued Date : 2012.07.18 Revised Date : Page No. : 1/9 MTP2301V3 Features • Advanced trench process technology • High density cell design for ultra low on resistance • Excellent thermal and electrical capabilities • Compact and low profile TSOT-23 package • Pb-free lead plating and halogen-free package BVDSS ID RDSON(MAX)@VGS=-4.5V, ID=-2.8A RDSON(MAX)@VGS=-2.5V, ID=-2A -20V -3.4A 79mΩ(typ.) 116mΩ(typ.) Equivalent Circuit MTP2301V3 Outline TSOT-23 D G G：Gate S：Source D：Drain S Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @TA=25°C, VGS=-4.5V Continuous Drain Current @TA=70°C, VGS=-4.