Datasheet Summary
CYStech Electronics Corp.
-20V P-CHANNEL Enhancement Mode MOSFET
Spec. No. : C322V3 Issued Date : 2012.07.18 Revised Date : Page No. : 1/9
Features
- Advanced trench process technology
- High density cell design for ultra low on resistance
- Excellent thermal and electrical capabilities
- pact and low profile TSOT-23 package
- Pb-free lead plating and halogen-free package
BVDSS ID RDSON(MAX)@VGS=-4.5V, ID=-2.8A RDSON(MAX)@VGS=-2.5V, ID=-2A
-20V -3.4A 79mΩ(typ.) 116mΩ(typ.)
Equivalent Circuit
Outline
TSOT-23 D
G G：Gate S：Source...