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MTP2317N3 - 20V P-CHANNEL Enhancement Mode MOSFET

Key Features

  • Advanced trench process technology.
  • High density cell design for ultra low on resistance.
  • Excellent thermal and electrical capabilities.
  • Compact and low profile SOT-23 package.
  • Pb-free lead plating and halogen-free package BVDSS ID RDSON@VGS=-4.5V, ID=-4.5A RDSON@VGS=-2.5V, ID=-2.5A RDSON@VGS=-1.8V, ID=-2A -20V -5.8A 28mΩ(typ. ) 35mΩ(typ. ) 51mΩ(typ. ) Equivalent Circuit MTP2317N3 Outline SOT-23 D G G：Gate S：Source D：Drain S Ordering Information.

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Datasheet Details

Part number MTP2317N3
Manufacturer CYStech Electronics
File Size 362.17 KB
Description 20V P-CHANNEL Enhancement Mode MOSFET
Datasheet download datasheet MTP2317N3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. 20V P-CHANNEL Enhancement Mode MOSFET Spec. No. : C566N3 Issued Date : 2012.04.12 Revised Date : 2014.01.14 Page No. : 1/9 MTP2317N3 Features • Advanced trench process technology • High density cell design for ultra low on resistance • Excellent thermal and electrical capabilities • Compact and low profile SOT-23 package • Pb-free lead plating and halogen-free package BVDSS ID RDSON@VGS=-4.5V, ID=-4.5A RDSON@VGS=-2.5V, ID=-2.5A RDSON@VGS=-1.8V, ID=-2A -20V -5.8A 28mΩ(typ.) 35mΩ(typ.) 51mΩ(typ.