MTP2317N3 - 20V P-CHANNEL Enhancement Mode MOSFET

Product Overview

CYStech Electronics

Part number	MTP2317N3
Manufacturer	CYStech Electronics
File Size	362.17 KB
Description	20V P-CHANNEL Enhancement Mode MOSFET
Datasheet	MTP2317N3 Datasheet
Additional preview pages of the MTP2317N3 datasheet.

Advanced trench process technology.
High density cell design for ultra low on resistance.
Excellent thermal and electrical capabilities.
Compact and low profile SOT-23 package.
Pb-free lead plating and halogen-free package BVDSS ID RDSON@VGS=-4.5V, ID=-4.5A RDSON@VGS=-2.5V, ID=-2.5A RDSON@VGS=-1.8V, ID=-2A -20V -5.8A 28mΩ(typ. ) 35mΩ(typ. ) 51mΩ(typ. ) Equivalent Circuit MTP2317N3 Outline SOT-23 D G G：Gate S：Source D：Drain S Ordering Information.

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Published: May 25, 2014 |