Datasheet Summary
CYStech Electronics Corp.
20V P-CHANNEL Enhancement Mode MOSFET
Spec. No. : C566N3 Issued Date : 2012.04.12 Revised Date : 2014.01.14 Page No. : 1/9
Features
- Advanced trench process technology
- High density cell design for ultra low on resistance
- Excellent thermal and electrical capabilities
- pact and low profile SOT-23 package
- Pb-free lead plating and halogen-free package
BVDSS ID RDSON@VGS=-4.5V, ID=-4.5A RDSON@VGS=-2.5V, ID=-2.5A RDSON@VGS=-1.8V, ID=-2A
-20V -5.8A 28mΩ(typ.) 35mΩ(typ.) 51mΩ(typ.)
Equivalent Circuit
Outline
SOT-23 D
G G：Gate S：Source D：Drain
Ordering Information
Device MTP2317N3-0-T1-G Package SOT-23 (Pb-free lead plating and...