Datasheet Summary
CYStech Electronics Corp.
Spec. No. : C322N3 Issued Date : 2004.04.05 Revised Date :2018.08.31 Page No. : 1/9
20V P-Channel Enhancement Mode MOSFET
BVDSS ID@TA=25°C, VGS=-4.5V
RDSON(TYP)@VGS=-4.5V, ID=-2.8A
RDSON(TYP)@VGS=-2.5V, ID=-2A
-20V -3.4A 79mΩ 116mΩ
Features
- Advanced trench process technology
- High density cell design for ultra low on resistance
- Excellent thermal and electrical capabilities
- pact and low profile SOT-23 package
- Pb-free lead plating and halogen-free package
Equivalent Circuit
Outline
SOT-23 D
G：Gate S：Source D：Drain
Ordering Information
Device MTP2301N3-0-T1-G
Package
Shipping
SOT-23 (Pb-free lead plating and...