MTB013N10RH8 Description
CYStech Electronics Corp. 2016.08.29 Revised Date : 1/10 N-Channel Enhancement Mode Power MOSFET MTB013N10RH8 BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C.
MTB013N10RH8 Key Features
- Single Drive Requirement
- Low On-resistance
- Fast Switching Characteristic
- Repetitive Avalanche Rated
- Pb-free lead plating and Halogen-free package