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MTB013N10RH8 - N-Channel Enhancement Mode Power MOSFET

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CYStech Electronics

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MTB013N10RH8 N-Channel Enhancement Mode Power MOSFET by CYStech Electronics - Datasheet Preview — Datasheet preview – MTB013N10RH8

Datasheet Details

Part number	MTB013N10RH8
Manufacturer	CYStech Electronics
File Size	572.17 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	MTB013N10RH8 Datasheet
Additional preview pages of the MTB013N10RH8 datasheet.

Product details

Features

RDSON(TYP) VGS=10V, ID=15A VGS=4.5V, ID=10A.
Single Drive Requirement.
Low On-resistance.
Fast Switching Characteristic.
Repetitive Avalanche Rated.
Pb-free lead plating and Halogen-free package 100V 42A 14.3A 9.8mΩ 11.1mΩ Symbol MTB013N10RH8 G：Gate D：Drain S：Source Outline Pin 1 S S S G DFN5×6 D D D D G S S S D D D D Pin 1 Ordering Information Device MTB013N10RH8-0-T6-G Package DFN 5 ×6 (Pb-free lead plating and halogen-free package) Shi.

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Published: Oct 26, 2016 |