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CYStech Electronics

MTB040P04Q8 Datasheet Preview

MTB040P04Q8 Datasheet

P-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C967Q8
Issued Date : 2016.09.21
Revised Date : 2017.02.13
Page No. : 1/9
P-Channel Enhancement Mode MOSFET
MTB040P04Q8 BVDSS
ID@VGS=-10V, TA=25°C
ID@VGS=-10V, TA=70°C
RDSON@VGS=-10V, ID=-6A
RDSON@VGS=-4.5V,ID=-5A
Features
Simple drive requirement
Low on-resistance
Fast switching speed
Pb-free lead plating and halogen-free package
-40V
-6.8A
-5.4A
31mΩ(typ)
41mΩ(typ)
Equivalent Circuit
MTB040P04Q8
Outline
DD
SOP-8
DD
GGate
SSource
DDrain
Pin 1
G
SSS
Ordering Information
Device
MTB040P04Q8-0-T3-G
Package
Shipping
SOP-8
(Pb-free lead plating and halogen-free package)
2500 pcs/ Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTB040P04Q8
CYStek Product Specification




CYStech Electronics

MTB040P04Q8 Datasheet Preview

MTB040P04Q8 Datasheet

P-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C967Q8
Issued Date : 2016.09.21
Revised Date : 2017.02.13
Page No. : 2/9
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Breakdown Voltage
Gate-Source Voltage
Continuous Drain Current @ VGS=-10V, TA=25°C (Note 1)
Continuous Drain Current @ VGS=-10V, TA=70°C (Note 1)
Pulsed Drain Current (Note 2)
Avalanche Current @ L=0.1mH
Avalanche Energy @ L=2mH, ID=-12A, VDD=-15V (Note 3)
Total Power Dissipation (Note 1)
TA=25 °C
TA=70 °C
Operating Junction and Storage Temperature
Symbol
BVDSS
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
Note : 1.Surface mounted on FR-4 board, t10sec.
2.Pulse width 300μs, Duty Cycle2%
3.100% tested by conditions of VDD=-15V, VGS=-10V, L=0.5mH, IAS=-12A
Limits
-40
±20
-6.8
-5.4
-38
-28
144
3.1
2
-55~+150
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
RθJC
RθJA
Note : Surface mounted on 1 in² copper pad of FR-4 board, pulse width10s.
Value
25
40 (Note )
Unit
°C/W
Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol Min. Typ. Max. Unit
Test Conditions
Static
BVDSS
VGS(th)
IGSS
IDSS
*RDS(ON)
*GFS
-40
-1
-
-
-
-
-
-
-
-
-
-2.5
V
VGS=0V, ID=-250μA
VDS=VGS, ID=-250μA
-
±100
nA VGS=±20V, VDS=0V
-
-
-1
-5
μA
VDS=-32V, VGS=0V
VDS=-32V, VGS=0V, Tj=55°C
31
41
41
55
mΩ
ID=-6A, VGS=-10V
ID=-5A, VGS=-4.5V
8.6 - S VDS=-10V, ID=-5A
Dynamic
Ciss
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
- 914 -
- 69 - pF VDS=-30V, VGS=0V, f=1MHz
- 56 -
- 6.8 -
-
-
20 -
66.6 -
ns VDD=-20V, ID=-6A, VGS=-10V, RG=1Ω
- 32.8 -
MTB040P04Q8
CYStek Product Specification


Part Number MTB040P04Q8
Description P-Channel Enhancement Mode Power MOSFET
Maker CYStech Electronics
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