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MTB04N03J3 - N-Channel Enhancement Mode Power MOSFET

Key Features

  • Simple Drive Requirement.
  • Repetitive Avalanche Rated.
  • Fast Switching Characteristic.
  • Pb-free lead plating and halogen-free package Symbol MTB04N03J3 Outline TO-252(DPAK) G:Gate D:Drain S:Source G DS Ordering Information Device MTB04N03J3-0-T3-G Package TO-252 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Pack.

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Datasheet Details

Part number MTB04N03J3
Manufacturer CYStech Electronics
File Size 312.08 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTB04N03J3 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C789J3 Issued Date : 2011.12.12 Revised Date : 2013.12.26 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFET MTB04N03J3 BVDSS ID 30V 75A RDS(ON)@VGS=10V, ID=30A 3.1mΩ(typ) RDS(ON)@VGS=4.5V, ID=24A 4.