• Part: MTB04N03Q8
  • Description: N-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: CYStech Electronics
  • Size: 674.27 KB
Download MTB04N03Q8 Datasheet PDF
CYStech Electronics
MTB04N03Q8
MTB04N03Q8 is N-Channel Enhancement Mode Power MOSFET manufactured by CYStech Electronics.
Description The MTB04N03Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 package is universally preferred for all mercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Features - Single Drive Requirement - Low On-resistance - Fast Switching Characteristic - Dynamic dv/dt rating - Repetitive Avalanche Rated - Pb-free lead plating package Ordering Information Device MTB04N03Q8-0-T3-G MTB04N03Q8-0-TF-G Package SOP-8 (Pb-free lead plating and halogen-free package) SOP-8 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / tape & reel 4000 pcs / tape & reel Environment friendly grade : S for Ro HS pliant products, G for Ro HS pliant and green pound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel, TF : 4000 pcs/tape & reel, 13” reel Product rank, zero for no rank products Product name CYStek Product Specification CYStech Electronics Corp. Spec. No. : C789Q8 Issued Date : 2011.12.16 Revised Date : 2020.01.13 Page No. : 2/9 Symbol Outline SOP-8 D G:Gate D:Drain S:Source Pin 1 Absolute Maximum Ratings (Ta=25C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25C, VGS=10V Continuous Drain Current @ TC=100C, VGS=10V Pulsed Drain Current Avalanche Current Avalanche Energy @ L=0.1m H, ID=20A, VDD=15V Repetitive Avalanche Energy @ L=0.05m H Total Power Dissipation TA=25℃ TA=100℃ Operating Junction and Storage Temperature...