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MTB04N03AQ8 - N-Channel Enhancement Mode Power MOSFET

Key Features

  • Single Drive Requirement.
  • Low On-resistance.
  • Fast Switching Characteristic.
  • Dynamic dv/dt rating.
  • Repetitive Avalanche Rated.
  • Pb-free lead plating and halogen-free package Symbol MTB04N03AQ8 Outline Pin 1 SOP-8 G:Gate D:Drain S:Source Ordering Information Device MTB04N03AQ8-0-T3-G Package SOP-8 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G.

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Datasheet Details

Part number MTB04N03AQ8
Manufacturer CYStech Electronics
File Size 270.37 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTB04N03AQ8 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C889Q8 Issued Date : 2013.12.02 Revised Date : Page No. : 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET MTB04N03AQ8 BVDSS ID @VGS=10V RDSON@VGS=10V, ID=18A RDSON@VGS=4.5V, ID=12A 30V 20A 4.4mΩ(typ) 5.