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CYStech Electronics

MTB04N03J3 Datasheet Preview

MTB04N03J3 Datasheet

N-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C789J3
Issued Date : 2011.12.12
Revised Date : 2013.12.26
Page No. : 1/11
N-Channel Enhancement Mode Power MOSFET
MTB04N03J3 BVDSS
ID
30V
75A
RDS(ON)@VGS=10V, ID=30A 3.1mΩ(typ)
RDS(ON)@VGS=4.5V, ID=24A 4.7mΩ(typ)
Features
Simple Drive Requirement
Repetitive Avalanche Rated
Fast Switching Characteristic
Pb-free lead plating and halogen-free package
Symbol
MTB04N03J3
Outline
TO-252(DPAK)
GGate
DDrain
SSource
G DS
Ordering Information
Device
MTB04N03J3-0-T3-G
Package
TO-252
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB04N03J3
CYStek Product Specification




CYStech Electronics

MTB04N03J3 Datasheet Preview

MTB04N03J3 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C789J3
Issued Date : 2011.12.12
Revised Date : 2013.12.26
Page No. : 2/11
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C
Continuous Drain Current @ TC=100°C
Pulsed Drain Current
(Note 1)
Avalanche Current
Avalanche Energy @ L=0.5mH, ID=35A, RG=25Ω
Repetitive Avalanche Energy@ L=0.05mH
(Note 2)
Total Power Dissipation @ TC=25
Total Power Dissipation @ TC=100
Operating Junction and Storage Temperature Range
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle 1%
Symbol
VDS
VGS
ID
IDM
IAS
EAS
EAR
Pd
Tj, Tstg
Limits
30
±20
75
48
200
53
300
5
50
20
-55~+150
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Rth,j-a
Note : When mounted on the minimum pad size recommended (PCB mount).
Value
2.5
50 (Note)
110
Unit
°C/W
°C/W
°C/W
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit Test Conditions
Static
BVDSS
VGS(th)
IGSS
IDSS
*RDS(ON)
*GFS
Dynamic
*Qg
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
30 -
- V VGS=0V, ID=250μA
1 1.6 2.5 V VDS = VGS, ID=250μA
-
-
±100
nA VGS=±20, VDS=0V
-
-
-
-
1
25
μA
VDS =30V, VGS =0V
VDS =30V, VGS =0V, Tj=125°C
-
-
3.1
4.7
4
6
mΩ
VGS =10V, ID=30A
VGS =4.5V, ID=24A
- 28 - S VDS =5V, ID=20A
- 50
-
- 18
- nC ID=40A, VDS=15V, VGS=4.5V
- 24
-
- 22
-
- 21
- 117
-
-
ns
VDS=15V, ID=1A, VGS=10V,
RGS=6Ω, RL=15Ω
- 52
-
MTB04N03J3
CYStek Product Specification


Part Number MTB04N03J3
Description N-Channel Enhancement Mode Power MOSFET
Maker CYStech Electronics
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