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MTB04N03J3 - N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Features

  • Simple Drive Requirement.
  • Repetitive Avalanche Rated.
  • Fast Switching Characteristic.
  • Pb-free lead plating and halogen-free package Symbol MTB04N03J3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G DS Ordering Information Device MTB04N03J3-0-T3-G Package TO-252 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Pack.

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Datasheet preview – MTB04N03J3

Datasheet Details

Part number MTB04N03J3
Manufacturer CYStech Electronics
File Size 312.08 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTB04N03J3 Datasheet
Additional preview pages of the MTB04N03J3 datasheet.

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Full PDF Text Transcription

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CYStech Electronics Corp. Spec. No. : C789J3 Issued Date : 2011.12.12 Revised Date : 2013.12.26 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFET MTB04N03J3 BVDSS ID 30V 75A RDS(ON)@VGS=10V, ID=30A 3.1mΩ(typ) RDS(ON)@VGS=4.5V, ID=24A 4.
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