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MTB04N03Q8 Datasheet Preview

MTB04N03Q8 Datasheet

N-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C789Q8
Issued Date : 2011.12.16
Revised Date : 2020.01.13
Page No. : 1/9
N-Channel Logic Level Enhancement Mode Power MOSFET
MTB04N03Q8
BVDSS
ID@ TC=25C, VGS=10V
RDSON@VGS=10V, ID=18A
RDSON@VGS=4.5V, ID=12A
30V
25A
3.5mΩ(typ)
4.8mΩ(typ)
Description
The MTB04N03Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications
and suited for low voltage applications such as DC/DC converters.
Features
Single Drive Requirement
Low On-resistance
Fast Switching Characteristic
Dynamic dv/dt rating
Repetitive Avalanche Rated
Pb-free lead plating package
Ordering Information
Device
MTB04N03Q8-0-T3-G
MTB04N03Q8-0-TF-G
Package
SOP-8
(Pb-free lead plating and halogen-free package)
SOP-8
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / tape & reel
4000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13reel, TF : 4000 pcs/tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB04N03Q8
CYStek Product Specification




CYStech Electronics

MTB04N03Q8 Datasheet Preview

MTB04N03Q8 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C789Q8
Issued Date : 2011.12.16
Revised Date : 2020.01.13
Page No. : 2/9
Symbol
Outline
MTB04N03Q8
SOP-8
D
D
D
D
GGate
DDrain
SSource
Pin 1
G
S
S
S
Absolute Maximum Ratings (Ta=25C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25C, VGS=10V
Continuous Drain Current @ TC=100C, VGS=10V
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=20A, VDD=15V
Repetitive Avalanche Energy @ L=0.05mH
Total Power Dissipation
TA=25
TA=100
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
Limits
30
±20
25
16
100 *1
20
40
0.3 *2
2.5
1
-55~+150
Unit
V
A
mJ
W
C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Rth,j-c
Rth,j-a
25
50 *3
C/W
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle1%
3. Surface mounted on 1 in²copper pad of FR-4 board, 125C/W when mounted on minimum copper pad
MTB04N03Q8
CYStek Product Specification


Part Number MTB04N03Q8
Description N-Channel Enhancement Mode Power MOSFET
Maker CYStech Electronics
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