CYStech Electronics Corp.
Spec. No. : C965FP
Issued Date : 2015.07.20
Revised Date : 2015.07.21
Page No. : 2/8
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @VGS=-10V, TC=25°C (Package limited)
Continuous Drain Current @VGS=-10V, TC=25°C (Silicon limited)
Continuous Drain Current @VGS=-10V, TC=100°C
Continuous Drain Current @VGS=-10V, TA=25°C
(Note 2)
Continuous Drain Current @VGS=-10V, TA=70°C
(Note 2)
Pulsed Drain Current
(Note 4)
TC=25℃
(Note 1)
Power Dissipation
TC=100℃
TA=25℃
(Note 1)
(Note 2)
TA=70℃
(Note 2)
Single Pulse Avalanche Energy @L=0.5mH, IAS=-30A
(Note 3)
Single Pulse Avalanche Current
(Note 3)
Operating Junction and Storage Temperature
VDS
VGS
ID
IDSM
IDM
PD
PDSM
EAS
IAS
Tj, Tstg
* 100% UIS testing in condition of VD=-15V, L=0.5mH, VG=10V, IAS=-20A, Rated VDS=-30V
Limits
-30
±20
-56
-72
-45.5
-12.9
-10.3
-288
62.5
25
2
1.3
225 *
-30
-55~+150
Unit
V
A
W
mJ
A
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max, t≤10s (Note 1)
Thermal Resistance, Junction-to-ambient, max
(Note 1)
Symbol
Rth,j-c
Rth,j-a
Value
2
15
62.5
Unit
°C/W
Note : 1.The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment
with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design.
3. Pulse width limited by junction temperature TJ(MAX)=150°C.
4. Pulse width ≤300μs pulses and duty cycle ≤0.5%.
5. The RθJA is the sum of thermal resistance from junction to case RθJC and case to ambient.
MTB5D0P03FP
CYStek Product Specification
