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CYStech Electronics

MTB5D0P03FP Datasheet Preview

MTB5D0P03FP Datasheet

P-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
P-Channel Enhancement Mode Power MOSFET
MTB5D0P03FP
Spec. No. : C965FP
Issued Date : 2015.07.20
Revised Date : 2015.07.21
Page No. : 1/8
Features
Single Drive Requirement
Low On-resistance
Fast switching Characteristic
Pb-free lead plating package
BVDSS
ID @ VGS=-10V, TC=25°C
RDS(ON)@VGS=-10V, ID=-25A
RDS(ON)@VGS=-4.5V, ID=-10A
-30V
-56A
4.2mΩ(typ)
4.8mΩ(typ)
Symbol
MTB5D0P03FP
Outline
TO-220FP
GGate
DDrain
SSource
GDS
Ordering Information
Device
Package
MTB5D0P03FP-0-UB-S
TO-220FP
(Pb-free lead plating package)
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTB5D0P03FP
CYStek Product Specification




CYStech Electronics

MTB5D0P03FP Datasheet Preview

MTB5D0P03FP Datasheet

P-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C965FP
Issued Date : 2015.07.20
Revised Date : 2015.07.21
Page No. : 2/8
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @VGS=-10V, TC=25°C (Package limited)
Continuous Drain Current @VGS=-10V, TC=25°C (Silicon limited)
Continuous Drain Current @VGS=-10V, TC=100°C
Continuous Drain Current @VGS=-10V, TA=25°C
(Note 2)
Continuous Drain Current @VGS=-10V, TA=70°C
(Note 2)
Pulsed Drain Current
(Note 4)
TC=25
(Note 1)
Power Dissipation
TC=100
TA=25
(Note 1)
(Note 2)
TA=70
(Note 2)
Single Pulse Avalanche Energy @L=0.5mH, IAS=-30A
(Note 3)
Single Pulse Avalanche Current
(Note 3)
Operating Junction and Storage Temperature
VDS
VGS
ID
IDSM
IDM
PD
PDSM
EAS
IAS
Tj, Tstg
* 100% UIS testing in condition of VD=-15V, L=0.5mH, VG=10V, IAS=-20A, Rated VDS=-30V
Limits
-30
±20
-56
-72
-45.5
-12.9
-10.3
-288
62.5
25
2
1.3
225 *
-30
-55~+150
Unit
V
A
W
mJ
A
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max, t10s (Note 1)
Thermal Resistance, Junction-to-ambient, max
(Note 1)
Symbol
Rth,j-c
Rth,j-a
Value
2
15
62.5
Unit
°C/W
Note : 1.The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment
with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design.
3. Pulse width limited by junction temperature TJ(MAX)=150°C.
4. Pulse width 300μs pulses and duty cycle 0.5%.
5. The RθJA is the sum of thermal resistance from junction to case RθJC and case to ambient.
MTB5D0P03FP
CYStek Product Specification


Part Number MTB5D0P03FP
Description P-Channel Enhancement Mode Power MOSFET
Maker CYStech Electronics
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