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MTN2N65BJ3 - N-Channel Enhancement Mode Power MOSFET

Features

  • Low On Resistance ID @VGS=10V, TC=100°C RDS(ON)@VGS=10V, ID=1A.
  • Simple Drive Requirement.
  • Low Gate Charge.
  • Fast Switching Characteristic.
  • Pb-free lead plating and halogen-free package 650V 2A 1.3A 3.9Ω(typ).

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Datasheet Details

Part number MTN2N65BJ3
Manufacturer CYStech Electronics
File Size 342.02 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTN2N65BJ3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C989J3 Issued Date : 2015.03.16 Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTN2N65BJ3 BVDSS ID @VGS=10V, TC=25°C Features • Low On Resistance ID @VGS=10V, TC=100°C RDS(ON)@VGS=10V, ID=1A • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • Pb-free lead plating and halogen-free package 650V 2A 1.3A 3.
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