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NE23300 - SUPER LOW NOISE HJ FET

Description

The NE23300 is a Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to create a two-dimensional electron gas layer with very high electron mobility.

Its excellent low noise figure and high associated gain make it suitable for space applications.

Features

  • VERY LOW NOISE FIGURE: 0.75 dB typical at 12 GHz Optimum Noise Figure, NFOPT (dB) NE23300 NOISE FIGURE &.

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Datasheet Details

Part number NE23300
Manufacturer California Eastern
File Size 58.20 KB
Description SUPER LOW NOISE HJ FET
Datasheet download datasheet NE23300 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SUPER LOW NOISE HJ FET (SPACE QUALIFIED) FEATURES • VERY LOW NOISE FIGURE: 0.75 dB typical at 12 GHz Optimum Noise Figure, NFOPT (dB) NE23300 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA 4.5 4.0 3.5 3.0 NF 2.5 2.0 1.5 1.0 0.5 0 1 10 40 16 14 12 10 8 6 GA 22 20 18 • HIGH ASSOCIATED GAIN: 10.5 dB Typical at 12 GHz • GATE LENGTH: 0.3 µm • GATE WIDTH: 280 µm DESCRIPTION The NE23300 is a Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to create a two-dimensional electron gas layer with very high electron mobility. Its excellent low noise figure and high associated gain make it suitable for space applications. NEC's stringent quality assurance and test procedures assure the highest reliability and performance.
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