* SUPER LOW NOISE FIGURE: NF = 0.35 dB TYP at f = 4 GHz
* HIGH ASSOCIATED GAIN: GA = 15.0 dB TYP at f = 4 GHz
* GATE LENGTH = LG = 0.3 µm
* GATE WIDTH = W.

NEC's stringent quality assurance and test procedures assure the highest reliability and performance. 1.0 ± 0.1 1.45 M.

The NE23383B is a heterojunction FET that utilizes the heterojunction to create high mobility electrons. The device features mushroom shaped gate for decreased gate resistance and improved power handling capabilities. The mushroom gate structure also.

NE23300

NE2001-VA20

NE2001-VA20A

NE2002-VA10A

NE2004-VA10A

NE202

NE20248

NE20283A

NE202930

NE202XX

NE202XX-1.4

NE219

NE21903