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NE23383B - SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ FET

General Description

The NE23383B is a heterojunction FET that utilizes the heterojunction to create high mobility electrons.

Key Features

  • SUPER LOW NOISE FIGURE: NF = 0.35 dB TYP at f = 4 GHz.
  • HIGH.

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Datasheet Details

Part number NE23383B
Manufacturer California Eastern
File Size 26.10 KB
Description SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ FET
Datasheet download datasheet NE23383B Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ FET NE23383B (SPACE QUALIFIED) FEATURES • SUPER LOW NOISE FIGURE: NF = 0.35 dB TYP at f = 4 GHz • HIGH ASSOCIATED GAIN: GA = 15.0 dB TYP at f = 4 GHz • GATE LENGTH = LG = 0.3 µm • GATE WIDTH = WG = 280 µm • HERMETIC SEALED CERAMIC PACKAGE • HIGH RELIABILITY 1.88 ± 0.3 2 4 0.5 ± 0.1 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 83B 1.88 ± 0.3 1 4.0 MIN (ALL LEADS) 3 DESCRIPTION The NE23383B is a heterojunction FET that utilizes the heterojunction to create high mobility electrons. The device features mushroom shaped gate for decreased gate resistance and improved power handling capabilities. The mushroom gate structure also results in low noise figure and high associated gain.