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NE33200 - SUPER LOW NOISE HJ FET

General Description

The NE33200 is a Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to create a two-dimensional electron gas layer with very high electron mobility.

Key Features

  • VERY LOW NOISE FIGURE: 0.75 dB typical at 12 GHz Optimum Noise Figure, NFOPT (dB) 4 3.5 NOISE FIGURE &.

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Datasheet Details

Part number NE33200
Manufacturer California Eastern
File Size 87.71 KB
Description SUPER LOW NOISE HJ FET
Datasheet download datasheet NE33200 Datasheet

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Full PDF Text Transcription (Reference)

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SUPER LOW NOISE HJ FET NE33200 FEATURES • VERY LOW NOISE FIGURE: 0.75 dB typical at 12 GHz Optimum Noise Figure, NFOPT (dB) 4 3.5 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA 24 21 18 15 12 9 6 NF 0.5 0 1 10 30 3 0 • HIGH ASSOCIATED GAIN: 10.5 dB Typical at 12 GHz • GATE LENGTH: 0.3 µm • GATE WIDTH: 280 µm 3 2.5 2 1.5 1 DESCRIPTION The NE33200 is a Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to create a two-dimensional electron gas layer with very high electron mobility. Its excellent low noise figure and high associated gain make it suitable for commercial and industrial applications. NEC's stringent quality assurance and test procedures assure the highest reliability and performance.