NE33284A
DESCRIPTION
The NE33284A is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for GPS, TVRO and another mercial systems.
L 1.78 ±0.2 1
PACKAGE DIMENSIONS (Unit: mm)
FEATURES
- Super Low Noise Figure & High Associated Gain NF = 0.35 d B TYP., Ga = 15.0 d B TYP. at f = 4 GHz
- Gate Width: Wg = 280 µm
1.78 ±0.2
2 L 3 L 4
ORDERING INFORMATION
SUPPLYING FORM STICK Tape & reel
PART NUMBER NE33284A-SL NE33284A-T1 NE33284A-T1A
LEAD LENGTH
L = 1.0 ±0.2 mm
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage Gate to Source Voltage Drain Current Total Power Dissipation Channel Temperature Storage Temperature VDS VGS ID Ptot Tch Tstg 4.0
- 3.0 IDSS 165 150
- 65 to +150 V m A m W ˚C ˚C
1. Source 2. Drain 3. Source 4. Gate
REMENDED OPERATING CONDITION (TA = 25 ˚C)
CHARACTERISTIC Drain to Source Voltage Drain Current Input Power SYMBOL VDS ID Pin MIN. TYP. 2 10 MAX. 3 20 0 Unit...
