Datasheet Summary
DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
DESCRIPTION
The NE33284A is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for GPS, TVRO and another mercial systems.
L 1.78 ±0.2 1
PACKAGE DIMENSIONS (Unit: mm)
Features
- Super Low Noise Figure & High Associated Gain NF = 0.35 dB TYP., Ga = 15.0 dB TYP. at f = 4 GHz
- Gate Width: Wg = 280 µm
1.78 ±0.2
2 L 3 L 4
ORDERING INFORMATION
SUPPLYING FORM STICK Tape & reel
PART NUMBER NE33284A-SL NE33284A-T1 NE33284A-T1A
LEAD LENGTH
L = 1.0 ±0.2 mm
ABSOLUTE...