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NE33284A-T1A - L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

Description

The NE33284A is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons.

Its excellent low noise and high associated gain make it suitable for GPS, TVRO and another commercial systems.

Features

  • Super Low Noise Figure & High Associated Gain NF = 0.35 dB TYP. , Ga = 15.0 dB TYP. at f = 4 GHz.
  • Gate Width: Wg = 280 µm 1.78 ±0.2 L U 2 L 3 L 4.

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Datasheet Details

Part number NE33284A-T1A
Manufacturer NEC
File Size 62.90 KB
Description L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
Datasheet download datasheet NE33284A-T1A Datasheet

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Full PDF Text Transcription

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DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE33284A L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE33284A is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for GPS, TVRO and another commercial systems. L 1.78 ±0.2 1 PACKAGE DIMENSIONS (Unit: mm) FEATURES • Super Low Noise Figure & High Associated Gain NF = 0.35 dB TYP., Ga = 15.0 dB TYP. at f = 4 GHz • Gate Width: Wg = 280 µm 1.78 ±0.2 L U 2 L 3 L 4 ORDERING INFORMATION SUPPLYING FORM STICK Tape & reel PART NUMBER NE33284A-SL NE33284A-T1 NE33284A-T1A LEAD LENGTH L = 1.0 ±0.
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