NE350184C Datasheet - CEL

NE350184C HETERO JUNCTION FIELD EFFECT TRANSISTOR K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

NE350184C Features

* Super low noise figure and high associated gain NF = 0.7 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz

* Micro-X ceramic (84C) package APPLICATIONS

* 20 GHz-band DBS LNB

* Other K-band communication systems ORDERING INFORMATION Part Number NE350184C-T1 NE350184C-T1A Ord

Datasheet Details

NE350184C

CEL

227.48 KB

Hetero junction field effect transistor k-band super low noise amplifier n-channel hj-fet.

📁 Related Datasheet

NE3503M04 C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER (California Eastern Labs)

NE3505M04 HETERO JUNCTION FIELD EFFECT TRANSISITOR (California Eastern Labs)

NE3508M04 HETERO JUNCTION FIELD EFFECT TRANSISITOR (California Eastern Labs)

NE3509M04 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET (CEL)

NE3510M04 HETERO JUNCTION FIELD EFFECT TRANSISTOR (CEL)

NE3511S02 X TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET (CEL)

NE3512S02 HETERO JUNCTION FIELD EFFECT TRANSISTOR (CEL)

NE3513M04 N-Channel GaAs HJ-FET (Renesas)

TAGS

NE350184C Distributor