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NE3519M04 - N-channel GaAs HJ-FET

NE3519M04 Description

PreliminaryData Sheet NE3519M04 N-channel GaAs HJ-FET, L to C Band Low Noise .

NE3519M04 Features

* R09DS0008EJ0100 Rev.1.00 Oct 21, 2010 Amplifier
* Low noise figure and high associated gain NF = 0.40 dB TYP. , Ga = 18.5 dB TYP. @VDS = 2 V, ID = 10 mA, f = 2 GHz

NE3519M04 Applications

* Satellite radio (SDARS, etc. )
* Low noise amplifier for microwave communication system ORDERING INFORMATION Part Number NE3519M04-T2 NE3519M04-T2B Order Number NE3519M04-T2-A NE3519M04-T2B-A Package Flat-lead 4-pin thin-type super minimold (M04) (Pb-Free) Quantity 3 kpcs/reel 15 k

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