NE3519M04 N-channel GaAs HJ-FET

Renesas

Description

PreliminaryData Sheet NE3519M04 N-channel GaAs HJ-FET, L to C Band Low Noise .

📥 Download Datasheet

NE3519M04 Datasheet Preview — Preview of NE3519M04 PDF

Datasheet Specifications

Part number: NE3519M04
Manufacturer: Renesas ↗
File Size: 244.84 KB
Datasheet: NE3519M04_Renesas.pdf
Description: N-channel GaAs HJ-FET

Features

* R09DS0008EJ0100 Rev.1.00 Oct 21, 2010 Amplifier
* Low noise figure and high associated gain NF = 0.40 dB TYP. , Ga = 18.5 dB TYP. @VDS = 2 V, ID = 10 mA, f = 2 GHz

Applications

* Satellite radio (SDARS, etc. )
* Low noise amplifier for microwave communication system ORDERING INFORMATION Part Number NE3519M04-T2 NE3519M04-T2B Order Number NE3519M04-T2-A NE3519M04-T2B-A Package Flat-lead 4-pin thin-type super minimold (M04) (Pb-Free) Quantity 3 kpcs/reel 15 k

NE3519M04 Distributors

📁 Related Datasheet

NE3510M04 NE3511S02 NE3512S02 NE3514S02 NE350184C NE3503M04

📌 All Tags

NE3519M04 N-channel GaAs HJ-FET Renesas

Renesas NE3519M04-like datasheet