NE3517S03 K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL GaAs HJ-FET

Renesas

Description

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Cor.
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

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Datasheet Specifications

Part number: NE3517S03
Manufacturer: Renesas ↗
File Size: 225.71 KB
Datasheet: NE3517S03_Renesas.pdf
Description: K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL GaAs HJ-FET

Features

* Super low noise figure, high associated gain NF = 0.7 dB TYP. , Ga = 13.5 dB TYP. @ f = 20 GHz

Applications

* or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign law

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NE3517S03 K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL GaAs HJ-FET Renesas

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