NE3520S03 Datasheet (Renesas) - N-Channel GaAs HJ-FET

NE3520S03, N-Channel GaAs HJ-FET

Summary First edition issued Rev.

1.00 Date Oct 18, 2011 Page - All trademarks and registered trademarks are the property of their respective owners.

C-1 Free Datasheet http://www.datasheet4u.com/ Notice 1.

All information included in this document is current as of the date this document is iss

NE3520S03 Features

* Low noise figure and high associated gain: NF = 0.65 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz, VDS = 2 V, ID = 10 mA

* K band Micro-X plastic (S03) package R09DS0029EJ0100 Rev.1.00 Oct 18, 2011 APPLICATIONS

* 20 GHz band DBS LNB

* Other K band communication system