Datasheet Details
Part number:
NE3510M04
Manufacturer:
CEL
File Size:
204.40 KB
Description:
Hetero junction field effect transistor
Features
* Low noise figure and high associated gain NF = 0.45 dB TYP. , Ga = 16 dB TYP. @ f = 4 GHz, VDS = 2 V, ID = 15 mA NF = 0.35 dB TYP. , Ga = 19 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA (Reference only)Applications
* Satellite radio (SDARS, DMB, etc. ) antenna LNADatasheet Details
Part number:
NE3510M04
Manufacturer:
CEL
File Size:
204.40 KB
Description:
Hetero junction field effect transistor
NE3510M04 Distributors
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