NE3510M04 - HETERO JUNCTION FIELD EFFECT TRANSISTOR

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CEL

NE3510M04 HETERO JUNCTION FIELD EFFECT TRANSISTOR by CEL - Datasheet Preview — Datasheet preview – NE3510M04

Datasheet Details

Part number	NE3510M04
Manufacturer	CEL
File Size	204.40 KB
Description	HETERO JUNCTION FIELD EFFECT TRANSISTOR
Datasheet	NE3510M04 Datasheet
Additional preview pages of the NE3510M04 datasheet.

Product details

Description

of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples.

Features

Low noise figure and high associated gain NF = 0.45 dB TYP. , Ga = 16 dB TYP. @ f = 4 GHz, VDS = 2 V, ID = 15 mA NF = 0.35 dB TYP. , Ga = 19 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA (Reference only).
Flat-lead 4-pin thin-type super minimold (M04) package.

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Published: Nov 10, 2013 |