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NE3510M04 - HETERO JUNCTION FIELD EFFECT TRANSISTOR

NE3510M04 Description

DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3510M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET .
of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and ap.

NE3510M04 Features

* Low noise figure and high associated gain NF = 0.45 dB TYP. , Ga = 16 dB TYP. @ f = 4 GHz, VDS = 2 V, ID = 15 mA NF = 0.35 dB TYP. , Ga = 19 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA (Reference only)

NE3510M04 Applications

* Satellite radio (SDARS, DMB, etc. ) antenna LNA
* Low noise amplifier for microwave communication system ORDERING INFORMATION Part Number NE3510M0 4 NE3510M04-T2 Order Number N E 35 10 M0 4- A NE3510M04-T2-A Package Flat-lead 4-pin thintype super minimold (M04) (Pb-Free) Quantity 5

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Datasheet Details

Part number
NE3510M04
Manufacturer
CEL
File Size
204.40 KB
Datasheet
NE3510M04_CEL.pdf
Description
HETERO JUNCTION FIELD EFFECT TRANSISTOR

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HETERO JUNCTION FIELD EFFECT TRANSISTOR CEL
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