NE3510M04 Datasheet, Transistor, CEL

NE3510M04 Features

• Transistor
• Low noise figure and high associated gain NF = 0.45 dB TYP., Ga = 16 dB TYP. @ f = 4 GHz, VDS = 2 V, ID = 15 mA NF = 0.35 dB TYP., Ga = 19 dB TYP. @ f = 2 GHz, VDS = 2 V, ID =

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Part number:

NE3510M04

Manufacturer:

CEL

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204.40kb

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📄 Datasheet

Description:

Hetero junction field effect transistor. of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product

NE3510M04 Application

• Applications
• Satellite radio (SDARS, DMB, etc.) antenna LNA
• Low noise amplifier for microwave communication system ORDERING INF

TAGS

NE3510M04

CEL

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