NE321000 Datasheet, Fet, CEL

NE321000 Features

• Fet
• SUPER LOW NOISE FIGURE: 0.35 dB Typ at f = 12 GHz Noise Figure, NF (dB) NE321000 NOISE FIGURE & ASSOCIATED GAIN vs. DRAIN CURRENT VDS = 2 V f = 12 GHz 15 GA 14 13 2.0 1.5 1.

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Part number:

NE321000

Manufacturer:

CEL

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161.99kb

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📄 Datasheet

Description:

Ultra low noise pseudomorphic hj fet. NEC's NE321000 is a Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to create high ele

NE321000 Application

• Applications NEC's stringent quality assurance and test procedures assure the highest reliability and performance. Drain Current, ID (mA) ELECTRI

TAGS

NE321000

CEL

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