NE321000

ULTRA LOW NOISE PSEUDOMORPHIC HJ FET

CEL

NE321000 Features

* SUPER LOW NOISE FIGURE: 0.35 dB Typ at f = 12 GHz Noise Figure, NF (dB) NE321000 NOISE FIGURE & ASSOCIATED GAIN vs. DRAIN CURRENT VDS = 2 V f = 12 GHz 15 GA 14 13 2.0 1.5 1.0 0.5 NF 0 10 20 30 12 11

* GATE LENGTH: ≤0.2 µm

* GATE WIDTH: 160 µm DESCRIPTION NEC's NE321000

NE321000 General Description

NEC's NE321000 is a Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to create high electron mobility. Its excellent low noise figure and high associated gain make it suitable for commercial, industrial and space applications. NEC's stringent quality ass.

NE321000 Datasheet (161.99 KB)

NE321000 Datasheet Preview — Preview of NE321000 PDF

Datasheet Details

Part number:

NE321000

Manufacturer:

CEL

File Size:

161.99 KB

Description:

Ultra low noise pseudomorphic hj fet.

📁 Related Datasheet

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DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32484A C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32484A is a H.

NE32484A-SL - C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET (NEC)
DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32484A C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32484A is a H.

NE32484A-T1 - C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET (NEC)
DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32484A C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32484A is a H.

NE32484A-T1A - C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET (NEC)
DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32484A C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32484A is a H.

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NE321000 ULTRA LOW NOISE PSEUDOMORPHIC FET CEL

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NE321000 Features

NE321000 General Description

Datasheet Details

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