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NE321000 Datasheet - CEL

Datasheet Details

Part number:

NE321000

Manufacturer:

CEL

File Size:

161.99 KB

Description:

ULTRA LOW NOISE PSEUDOMORPHIC HJ FET

www.DataSheet4U.com ULTRA LOW NOISE PSEUDOMORPHIC HJ FET FEATURES * SUPER LOW NOISE FIGURE: 0.35 dB Typ at f = 12 GHz Noise Figure, NF (dB) NE321000 NOISE FIGURE & ASSOCIATED GAIN vs.

DRAIN CURRENT VDS = 2 V f = 12 GHz 15 GA 14 13 2.0 1.5 1.0 0.5 NF 0 10 20 30 12 11 * GATE LENGTH

NE321000_CEL.pdf

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NE321000, ULTRA LOW NOISE PSEUDOMORPHIC HJ FET

NEC's NE321000 is a Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to create high electron mobility.

Its excellent low noise figure and high associated gain make it suitable for commercial, industrial and space applications.

NEC's stringent quality ass

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