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NE321000 - ULTRA LOW NOISE PSEUDOMORPHIC HJ FET

NE321000 Description

www.DataSheet4U.com ULTRA LOW NOISE PSEUDOMORPHIC HJ FET .
NEC's NE321000 is a Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to create high electron mobility.

NE321000 Features

* SUPER LOW NOISE FIGURE: 0.35 dB Typ at f = 12 GHz Noise Figure, NF (dB) NE321000 NOISE FIGURE & ASSOCIATED GAIN vs. DRAIN CURRENT VDS = 2 V f = 12 GHz 15 GA 14 13 2.0 1.5 1.0 0.5 NF 0 10 20 30 12 11
* GATE LENGTH: ≤0.2 µm

NE321000 Applications

* NEC's stringent quality assurance and test procedures assure the highest reliability and performance. Drain Current, ID (mA) ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS NF GA1 IDSS VP gM IGSO PARAMETERS AND CONDITIONS Noise Figure, VDS = 2 V, ID = 10 mA, f = 12 GH

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Datasheet Details

Part number
NE321000
Manufacturer
CEL
File Size
161.99 KB
Datasheet
NE321000_CEL.pdf
Description
ULTRA LOW NOISE PSEUDOMORPHIC HJ FET

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ULTRA LOW NOISE PSEUDOMORPHIC FET CEL
CEL NE321000-like datasheet