NE321000 ULTRA LOW NOISE PSEUDOMORPHIC HJ FET

CEL

Description

www.DataSheet4U.com ULTRA LOW NOISE PSEUDOMORPHIC HJ FET .
NEC's NE321000 is a Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to create high electron mobility.

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Datasheet Specifications

Part number: NE321000
Manufacturer: CEL
File Size: 161.99 KB
Datasheet: NE321000_CEL.pdf
Description: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET

Features

* SUPER LOW NOISE FIGURE: 0.35 dB Typ at f = 12 GHz Noise Figure, NF (dB) NE321000 NOISE FIGURE & ASSOCIATED GAIN vs. DRAIN CURRENT VDS = 2 V f = 12 GHz 15 GA 14 13 2.0 1.5 1.0 0.5 NF 0 10 20 30 12 11
* GATE LENGTH: ≤0.2 µm

Applications

* NEC's stringent quality assurance and test procedures assure the highest reliability and performance. Drain Current, ID (mA) ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS NF GA1 IDSS VP gM IGSO PARAMETERS AND CONDITIONS Noise Figure, VDS = 2 V, ID = 10 mA, f = 12 GH

NE321000 Distributors

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NE321000 ULTRA LOW NOISE PSEUDOMORPHIC FET CEL

CEL NE321000-like datasheet