NE321000 - ULTRA LOW NOISE PSEUDOMORPHIC HJ FET

Product Overview

CEL

Part number	NE321000
Manufacturer	CEL
File Size	161.99 KB
Description	ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
Datasheet	NE321000 Datasheet
Additional preview pages of the NE321000 datasheet.

NEC's NE321000 is a Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to create high electron mobility.

SUPER LOW NOISE FIGURE: 0.35 dB Typ at f = 12 GHz Noise Figure, NF (dB) NE321000 NOISE FIGURE &.

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Other Datasheets by CEL

NE350184C - HETERO JUNCTION FIELD EFFECT TRANSISTOR K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
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Published: Mar 31, 2007 |