Datasheet Details
- Part number
- NE321000
- Manufacturer
- CEL
- File Size
- 161.99 KB
- Datasheet
- NE321000_CEL.pdf
- Description
- ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
NE321000 Description
www.DataSheet4U.com ULTRA LOW NOISE PSEUDOMORPHIC HJ FET .
NEC's NE321000 is a Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to create high electron mobility.
NE321000 Features
* SUPER LOW NOISE FIGURE: 0.35 dB Typ at f = 12 GHz
Noise Figure, NF (dB)
NE321000
NOISE FIGURE & ASSOCIATED GAIN vs. DRAIN CURRENT
VDS = 2 V f = 12 GHz 15 GA 14 13 2.0 1.5 1.0 0.5 NF 0 10 20 30 12 11
* GATE LENGTH: ≤0.2 µm
NE321000 Applications
* NEC's stringent quality assurance and test procedures assure the highest reliability and performance. Drain Current, ID (mA)
ELECTRICAL CHARACTERISTICS
(TA = 25°C)
PART NUMBER PACKAGE OUTLINE
SYMBOLS NF GA1 IDSS VP gM IGSO PARAMETERS AND CONDITIONS Noise Figure, VDS = 2 V, ID = 10 mA, f = 12 GH
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