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NE321000 Datasheet - CEL

NE321000 ULTRA LOW NOISE PSEUDOMORPHIC HJ FET

NEC's NE321000 is a Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to create high electron mobility. Its excellent low noise figure and high associated gain make it suitable for commercial, industrial and space applications. NEC's stringent quality ass.

NE321000_CEL.pdf

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Datasheet Details

Part number:

NE321000

Manufacturer:

CEL

File Size:

161.99 KB

Description:

Ultra low noise pseudomorphic hj fet.

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NE321000 NE321000 ULTRA LOW NOISE PSEUDOMORPHIC FET CEL

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