Datasheet4U Logo Datasheet4U.com

NE32500 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP

NE32500 Description

DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32500, NE27200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP .
NE32500 and NE27200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs and undoped InGaAs to create high mobility.

NE32500 Features

* Super Low Noise Figure & High Associated Gain NF = 0.45 dB TYP. , Ga = 12.5 dB TYP. at f = 12 GHz
* Gate Length : Lg = 0.2 µm
* Gate Width : Wg = 200 µm ORDERING INFORMATION PART NUMBER NE32500 NE27200 Standard (Grade D) Special, specific (Grade C and B) QUALITY GRADE ABSO

📥 Download Datasheet

Preview of NE32500 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
NE32500
Manufacturer
NEC
File Size
39.82 KB
Datasheet
NE32500_NEC.pdf
Description
C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP

📁 Related Datasheet

  • NE321000 - ULTRA LOW NOISE PSEUDOMORPHIC HJ FET (CEL)
  • NE3210S01 - HETERO JUNCTION FIELD EFFECT TRANSISTOR (CEL)
  • NE3002-VA10A - Near edge thermal printhead (300 dots / inch) (Rohm)
  • NE3004-VA10A - Near edge thermal printhead (300 dots / inch) (Rohm)
  • NE33200 - SUPER LOW NOISE HJ FET (California Eastern)
  • NE350184C - HETERO JUNCTION FIELD EFFECT TRANSISTOR K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET (CEL)
  • NE3503M04 - C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER (California Eastern Labs)
  • NE3505M04 - HETERO JUNCTION FIELD EFFECT TRANSISITOR (California Eastern Labs)

📌 All Tags

BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP NEC
NEC NE32500-like datasheet