NE32584C-T1 Datasheet - NEC

NE32584C-T1 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

The NE32584C is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems. 1.78 ±0.2 1 L L PACKAGE DIMENSIONS (Unit: mm) * Super Low Noise Figure .

NE32584C-T1 Features

* 1994 NE32584C ELECTRICAL CHARACTERISTICS (TA = 25 qC) CHARACTERISTIC Gate to Source Leak Current Saturated Drain Current Gate to Source Cutoff Voltage Transconductance Noise Figure Associated Gain SYMBOL IGSO IDSS VGS(off) gm NF Ga 11.0 20 ð0.2 45 MIN. TYP. 0.5 60 ð0.7 60 0.45 12.5 0.55 MAX. 10 90

NE32584C-T1_NEC.pdf