NE3210S01 Datasheet, Transistor, CEL

NE3210S01 Features

  • Transistor
  • Super Low Noise Figure & High Associated Gain NF = 0.35 dB TYP. Ga = 13.5 dB TYP. at f = 12 GHz
  • Gate Length: Lg ≤ 0.20 µm
  • Gate Width : Wg = 160 µm ORDERIN

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Part number:

NE3210S01

Manufacturer:

CEL

File Size:

729.40kb

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📄 Datasheet

Description:

Hetero junction field effect transistor. The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise a

Datasheet Preview: NE3210S01 📥 Download PDF (729.40kb)
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TAGS

NE3210S01
HETERO
JUNCTION
FIELD
EFFECT
TRANSISTOR
CEL

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Stock and price

part
California Eastern Laboratories (CEL)
RF MOSFET GAAS HJ-FET 2V SMD
DigiKey
NE3210S01
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Unit Price : $0
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