NE3210S01 - HETERO JUNCTION FIELD EFFECT TRANSISTOR

Product Overview

CEL

Part number	NE3210S01
Manufacturer	CEL
File Size	729.40 KB
Description	HETERO JUNCTION FIELD EFFECT TRANSISTOR
Datasheet	NE3210S01 Datasheet
Additional preview pages of the NE3210S01 datasheet.

The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons.

Super Low Noise Figure & High Associated Gain NF = 0.35 dB TYP. Ga = 13.5 dB TYP. at f = 12 GHz.
Gate Length: Lg ≤ 0.20 µm.
Gate Width : Wg = 160 µm.

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Published: Jun 28, 2019 |