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NE3210S01 - HETERO JUNCTION FIELD EFFECT TRANSISTOR

NE3210S01 Description

Drop-InDISReplacement:CONTICE3512K2NUED DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3210S01 X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL .
The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons.

NE3210S01 Features

* Super Low Noise Figure & High Associated Gain NF = 0.35 dB TYP. Ga = 13.5 dB TYP. at f = 12 GHz
* Gate Length: Lg ≤ 0.20 µm
* Gate Width : Wg = 160 µm ORDERING INFORMATION (PLAN) Part Number Supplying Form NE3210S01-T1 Tape & reel 1 000 pcs. /reel NE3210S01-T1B Tape &

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Datasheet Details

Part number
NE3210S01
Manufacturer
CEL
File Size
729.40 KB
Datasheet
NE3210S01-CEL.pdf
Description
HETERO JUNCTION FIELD EFFECT TRANSISTOR

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HETERO JUNCTION FIELD EFFECT TRANSISTOR CEL
CEL NE3210S01-like datasheet