NE3210S01 HETERO JUNCTION FIELD EFFECT TRANSISTOR

CEL

Description

Drop-InDISReplacement:CONTICE3512K2NUED DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3210S01 X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL .
The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons.

📥 Download Datasheet

NE3210S01 Datasheet Preview — Preview of NE3210S01 PDF

Datasheet Specifications

Part number: NE3210S01
Manufacturer: CEL
File Size: 729.40 KB
Datasheet: NE3210S01-CEL.pdf
Description: HETERO JUNCTION FIELD EFFECT TRANSISTOR

Features

* Super Low Noise Figure & High Associated Gain NF = 0.35 dB TYP. Ga = 13.5 dB TYP. at f = 12 GHz
* Gate Length: Lg ≤ 0.20 µm
* Gate Width : Wg = 160 µm ORDERING INFORMATION (PLAN) Part Number Supplying Form NE3210S01-T1 Tape & reel 1 000 pcs. /reel NE3210S01-T1B Tape &

NE3210S01 Distributors

📁 Related Datasheet

NE321000 NE32400 NE32484A NE32484A-SL NE32484A-T1 NE32484A-T1A

📌 All Tags

NE3210S01 HETERO JUNCTION FIELD EFFECT TRANSISTOR CEL

CEL NE3210S01-like datasheet