NE3210S01 Datasheet - CEL

NE3210S01 HETERO JUNCTION FIELD EFFECT TRANSISTOR

NE3210S01 Features

* Super Low Noise Figure & High Associated Gain NF = 0.35 dB TYP. Ga = 13.5 dB TYP. at f = 12 GHz

* Gate Length: Lg ≤ 0.20 µm

* Gate Width : Wg = 160 µm ORDERING INFORMATION (PLAN) Part Number Supplying Form NE3210S01-T1 Tape & reel 1 000 pcs./reel NE3210S01-T1B Tape &

Datasheet Details

NE3210S01

CEL

729.40 KB

Hetero junction field effect transistor.

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NE3210S01 HETERO JUNCTION FIELD EFFECT TRANSISTOR CEL

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