Datasheet Details
- Part number
- NE321000
- Manufacturer
- NEC
- File Size
- 48.78 KB
- Datasheet
- NE321000_NEC.pdf
- Description
- C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP
NE321000 Description
DATA SHEET HETERO JUNCTION FIELDEFFECT TRANSISTOR NE321000 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP .
The NE321000 is Hetero Junction FET that utilizes the hetero junction to create high mobility electrons.
NE321000 Features
* Super Low Noise Figure & High Associated Gain NF = 0.35 dB TYP. Ga = 13.5 dB TYP. @ f = 12 GHz
* Gate Length: Lg ≤ 0.20 µm
* Gate Width : Wg = 160 µm
ORDERING INFORMATION (PLAN)
Part Number NE321000 Standard (Grade D) Quality Grade
Remark To order evaluation samples, plea
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