NE321000 Datasheet, Chip, NEC

NE321000 Features

• Chip
• Super Low Noise Figure & High Associated Gain NF = 0.35 dB TYP. Ga = 13.5 dB TYP. @ f = 12 GHz
• Gate Length: Lg ≤ 0.20 µm
• Gate Width : Wg = 160 µm ORDERING

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Part number:

NE321000

Manufacturer:

NEC

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48.78kb

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📄 Datasheet

Description:

C to ka band super low noise amplifier n-channel hj-fet chip. The NE321000 is Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and

NE321000 Application

• Applications FEATURES
• Super Low Noise Figure & High Associated Gain NF = 0.35 dB TYP. Ga = 13.5 dB TYP. @ f = 12 GHz
• Gate Leng

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