NE321000 Datasheet - NEC

NE321000 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP

NE321000 Features

* Super Low Noise Figure & High Associated Gain NF = 0.35 dB TYP. Ga = 13.5 dB TYP. @ f = 12 GHz

* Gate Length: Lg ≤ 0.20 µm

* Gate Width : Wg = 160 µm ORDERING INFORMATION (PLAN) Part Number NE321000 Standard (Grade D) Quality Grade Remark To order evaluation samples, plea

Datasheet Details

NE321000

NEC

48.78 KB

C to ka band super low noise amplifier n-channel hj-fet chip.

📁 Related Datasheet

NE321000 ULTRA LOW NOISE PSEUDOMORPHIC HJ FET (CEL)

NE3210S01 X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET (NEC)

NE3210S01 HETERO JUNCTION FIELD EFFECT TRANSISTOR (CEL)

NE32400 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP (NEC)

NE32484A C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET (NEC)

NE32484A-SL C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET (NEC)

NE32484A-T1 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET (NEC)

NE32484A-T1A C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET (NEC)

TAGS

NE321000 Distributor