NE3210S01 - X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET

Product Overview

NEC

Part number	NE3210S01
Manufacturer	NEC
File Size	62.71 KB
Description	X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET
Datasheet	NE3210S01 Datasheet
Additional preview pages of the NE3210S01 datasheet.

The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons.

Super Low Noise Figure & High Associated Gain NF = 0.35 dB TYP. Ga = 13.5 dB TYP. at f = 12 GHz.
Gate Length: Lg ≤ 0.20 µm.
Gate Width : Wg = 160 µm.

📁 Similar Datasheet

NE3002-VA10A - Near edge thermal printhead (300 dots / inch) (Rohm)
NE3004-VA10A - Near edge thermal printhead (300 dots / inch) (Rohm)
NE33200 - SUPER LOW NOISE HJ FET (California Eastern)
NE350184C - HETERO JUNCTION FIELD EFFECT TRANSISTOR K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET (CEL)
NE3503M04 - C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER (California Eastern Labs)
NE3505M04 - HETERO JUNCTION FIELD EFFECT TRANSISITOR (California Eastern Labs)
NE3508M04 - HETERO JUNCTION FIELD EFFECT TRANSISITOR (California Eastern Labs)
NE3509M04 - L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET (CEL)

Other Datasheets by NEC

Published: May 12, 2005 |