NE3508M04

HETERO JUNCTION FIELD EFFECT TRANSISITOR

California Eastern Labs

NE3508M04 Features

* - Super Low Noise Figure & Associated Gain : NF=0.45dB TYP. Ga=14dB TYP. @f=2GHz, VDS=2V, ID=10mA - Flat-lead 4-pin tin-type super mini-mold(M04) package (Pb-Free T. ) APPLICATIONS - Satellite Radio(SDARS, DMB, etc.) antenna LNA - LNA for Micro-wave communication system ORDERING INFORMATION Part Nu

NE3508M04 Datasheet (1.30 MB)

NE3508M04 Datasheet Preview — Preview of NE3508M04 PDF

Datasheet Details

Part number:

NE3508M04

Manufacturer:

California Eastern Labs

File Size:

1.30 MB

Description:

Hetero junction field effect transisitor.
www.DataSheet4U.com PRELIMINARY PRODUCT INFORMATION HETERO JUNCTION FIELD EFFECT TRANSISITOR NE3508M04 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-.

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NE3508M04 HETERO JUNCTION FIELD EFFECT TRANSISITOR California Eastern Labs

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NE3508M04 Features

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