NE3513M04 N-Channel GaAs HJ-FET

Renesas

Description

Data Sheet NE3513M04 N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain .
Summary First edition issued Rev.

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Datasheet Specifications

Part number: NE3513M04
Manufacturer: Renesas ↗
File Size: 244.73 KB
Datasheet: NE3513M04_Renesas.pdf
Description: N-Channel GaAs HJ-FET

Features

* R09DS0028EJ0100 Rev.1.00 Oct 18, 2011
* Low noise figure and high associated gain: NF = 0.45 dB TYP. , Ga = 13 dB TYP. @VDS = 2 V, ID = 10 mA, f = 12 GHz NF = 0.5 dB TYP. , Ga = 12 dB TYP. @VDS = 2 V, ID = 6 mA, f = 12 GHz (Reference Value)
* Flat-lead 4-pin thin-type super minimold

Applications

* DBS LNB gain-stage, Mix-stage
* Low noise amplifier for microwave communication system ORDERING INFORMATION Part Number NE3513M04-T2 Order Number NE3513M04-T2-A Package Quantity Flat-lead 4-pin 3 kpcs/reel thin-type super minimold (M04) 15 kpcs/reel (Pb-Free) Marking V84 Supplying

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NE3513M04 N-Channel GaAs HJ-FET Renesas

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