NE3513M04 Datasheet (Renesas) - N-Channel GaAs HJ-FET

NE3513M04, N-Channel GaAs HJ-FET

Summary First edition issued Rev.

1.00 Date Oct 18, 2011 Page - All trademarks and registered trademarks are the property of their respective owners.

C-1 Free Datasheet http://www.datasheet4u.com/ Notice 1.

All information included in this document is current as of the date this document is iss

NE3513M04 Features

* R09DS0028EJ0100 Rev.1.00 Oct 18, 2011

* Low noise figure and high associated gain: NF = 0.45 dB TYP., Ga = 13 dB TYP. @VDS = 2 V, ID = 10 mA, f = 12 GHz NF = 0.5 dB TYP., Ga = 12 dB TYP. @VDS = 2 V, ID = 6 mA, f = 12 GHz (Reference Value)

* Flat-lead 4-pin thin-type super minimold