Datasheet Details
- Part number
- NE3512S02
- Manufacturer
- CEL
- File Size
- 228.56 KB
- Datasheet
- NE3512S02_CEL.pdf
- Description
- HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE3512S02 Description
www.DataSheet4U.com HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3512S02 C TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET .
NE3512S02 Features
* Super low noise figure and high associated gain NF = 0.35 dB TYP. , Ga = 13.5 dB TYP. @ f = 12 GHz
NE3512S02 Applications
* C to Ku-band DBS LNB
* Other C to Ku-band communication systems
ORDERING INFORMATION
Part Number NE3512S02-T1C NE3512S02-T1D Order Number NE3512S02-T1C-A NE3512S02-T1D-A Package S02 (Pb-Free) Quantity 2 kpcs/reel 10 kpcs/reel Marking C Supplying Form
* 8 mm wide embossed t
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