NE3512S02 Datasheet, Transistor, CEL

NE3512S02 Features

  • Transistor
  • Super low noise figure and high associated gain NF = 0.35 dB TYP., Ga = 13.5 dB TYP. @ f = 12 GHz
  • Micro-X plastic (S02) package APPLICATIONS
  • C to Ku-band

PDF File Details

Part number:

NE3512S02

Manufacturer:

CEL

File Size:

228.56kb

Download:

📄 Datasheet

Description:

Hetero junction field effect transistor.

Datasheet Preview: NE3512S02 📥 Download PDF (228.56kb)
Page 2 of NE3512S02 Page 3 of NE3512S02

NE3512S02 Application

  • Applications
  • C to Ku-band DBS LNB
  • Other C to Ku-band communication systems ORDERING INFORMATION Part Number NE3512S02-T1C NE351

TAGS

NE3512S02
HETERO
JUNCTION
FIELD
EFFECT
TRANSISTOR
CEL

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Stock and price

part
California Eastern Laboratories (CEL)
RF MOSFET GAAS HJ-FET 2V S02
DigiKey
NE3512S02-T1C-A
0 In Stock
0
Unit Price : $0
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