NE3512S02 - HETERO JUNCTION FIELD EFFECT TRANSISTOR

Product Overview

CEL

Part number	NE3512S02
Manufacturer	CEL
File Size	228.56 KB
Description	HETERO JUNCTION FIELD EFFECT TRANSISTOR
Datasheet	NE3512S02 Datasheet
Additional preview pages of the NE3512S02 datasheet.

Super low noise figure and high associated gain NF = 0.35 dB TYP. , Ga = 13.5 dB TYP. @ f = 12 GHz.
Micro-X plastic (S02) package.

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Published: Dec 27, 2006 |