NE3512S02 HETERO JUNCTION FIELD EFFECT TRANSISTOR

CEL

Description

www.DataSheet4U.com HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3512S02 C TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET .

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Datasheet Specifications

Part number: NE3512S02
Manufacturer: CEL
File Size: 228.56 KB
Datasheet: NE3512S02_CEL.pdf
Description: HETERO JUNCTION FIELD EFFECT TRANSISTOR

Features

* Super low noise figure and high associated gain NF = 0.35 dB TYP. , Ga = 13.5 dB TYP. @ f = 12 GHz

Applications

* C to Ku-band DBS LNB
* Other C to Ku-band communication systems ORDERING INFORMATION Part Number NE3512S02-T1C NE3512S02-T1D Order Number NE3512S02-T1C-A NE3512S02-T1D-A Package S02 (Pb-Free) Quantity 2 kpcs/reel 10 kpcs/reel Marking C Supplying Form
* 8 mm wide embossed t

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NE3512S02 HETERO JUNCTION FIELD EFFECT TRANSISTOR CEL

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