Datasheet Details
- Part number
- NE3516S02
- Manufacturer
- Renesas ↗
- File Size
- 143.00 KB
- Datasheet
- NE3516S02_Renesas.pdf
- Description
- N-Channel GaAs HJ-FET
NE3516S02 Description
Data Sheet NE3516S02 N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain .
Summary First edition issued
Rev.
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NE3516S02 Features
* R09DS0038EJ0100 Rev.1.00 Apr 18, 2012
* Low noise figure and high associated gain NF = 0.35 dB TYP. , Ga = 14 dB TYP. @ f = 12 GHz, VDS = 2 V, ID = 10 mA NF = 0.35 dB TYP. , Ga = 13.5 dB TYP. @ f = 12 GHz, VDS = 2 V, ID = 6 mA (Reference Value)
* 4-pin Micro-X plastic (S02) package
NE3516S02 Applications
* X to Ku band DBS LNB
* Other Ku band communication system
ORDERING INFORMATION
Part Number Order Number Package S02 package (Pb-Free) Quantity 2 kpcs/reel 10 kpcs/reel Marking P Supplying Form
* 8 mm wide embossed taping
* Pin 4 (Gate) faces the perforation side of
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