NE3516S02 N-Channel GaAs HJ-FET

Renesas

Description

Data Sheet NE3516S02 N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain .
Summary First edition issued Rev. All trademarks and registered trademarks are the property of their respect.

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Datasheet Specifications

Part number: NE3516S02
Manufacturer: Renesas ↗
File Size: 143.00 KB
Datasheet: NE3516S02_Renesas.pdf
Description: N-Channel GaAs HJ-FET

Features

* R09DS0038EJ0100 Rev.1.00 Apr 18, 2012
* Low noise figure and high associated gain NF = 0.35 dB TYP. , Ga = 14 dB TYP. @ f = 12 GHz, VDS = 2 V, ID = 10 mA NF = 0.35 dB TYP. , Ga = 13.5 dB TYP. @ f = 12 GHz, VDS = 2 V, ID = 6 mA (Reference Value)
* 4-pin Micro-X plastic (S02) package

Applications

* X to Ku band DBS LNB
* Other Ku band communication system ORDERING INFORMATION Part Number Order Number Package S02 package (Pb-Free) Quantity 2 kpcs/reel 10 kpcs/reel Marking P Supplying Form
* 8 mm wide embossed taping
* Pin 4 (Gate) faces the perforation side of

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NE3516S02 N-Channel GaAs HJ-FET Renesas

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