NE3516S02 Datasheet (Renesas) - N-Channel GaAs HJ-FET

NE3516S02, N-Channel GaAs HJ-FET

Summary First edition issued Rev.

1.00 Date Apr 18, 2012 Page * All trademarks and registered trademarks are the property of their respective owners.

C-1 Free Datasheet http://www.datasheet4u.com/ Notice 1.

All information included in this document is current as of the date this documen

NE3516S02 Features

* R09DS0038EJ0100 Rev.1.00 Apr 18, 2012

* Low noise figure and high associated gain NF = 0.35 dB TYP., Ga = 14 dB TYP. @ f = 12 GHz, VDS = 2 V, ID = 10 mA NF = 0.35 dB TYP., Ga = 13.5 dB TYP. @ f = 12 GHz, VDS = 2 V, ID = 6 mA (Reference Value)

* 4-pin Micro-X plastic (S02) package