Datasheet Details
- Part number
- NE3521M04
- Manufacturer
- Renesas ↗
- File Size
- 431.07 KB
- Datasheet
- NE3521M04_Renesas.pdf
- Description
- N-Channel GaAs HJ-FET
NE3521M04 Description
Data Sheet NE3521M04 N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain .
Summary First edition issued
Rev.
NE3521M04 Features
* R09DS0058EJ0100 Rev.1.00 Mar 19, 2013
* Low noise figure and high associated gain: NF = 0.85 dB TYP. , Ga = 11 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 20 GHz NF = 0.9 dB TYP. , Ga = 10.5 dB TYP. @VDS = 2 V, ID = 6mA, f = 20 GHz (Reference Value)
* Flat-lead 4-pin thin-type super minimol
NE3521M04 Applications
* DBS LNB gain-stage, Mix-stage
* Low noise amplifier for microwave communication system
ORDERING INFORMATION
Part Number NE3521M04-T2 Order Number NE3521M04-T2-A Package Quantity Flat-lead 4-pin 3 kpcs/reel thin-type super minimold (M04) 15 kpcs/reel (Pb-Free) Marking V86 Supplying
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