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NE663M04 - NPN SILICON HIGH FREQUENCY TRANSISTOR

Description

NEC's NE663M04 is fabricated using NEC's UHS0 25 GHz fT wafer process.

With a typical transition frequency of 19 GHz the NE663M04 is usable in applications from 100 MHz to 5 GHz.

The NE663M04 provides excellent low voltage/low current performance.

Features

  • HIGH GAIN.

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Datasheet Details

Part number NE663M04
Manufacturer California Eastern Labs
File Size 407.63 KB
Description NPN SILICON HIGH FREQUENCY TRANSISTOR
Datasheet download datasheet NE663M04 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • • • HIGH GAIN BANDWIDTH: fT = 15 GHz HIGH POWER GAIN: IS21EI2 = 11 dB TYP at 2 GHz LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz HIGH IP3: NF = 27 dBm at 2 GHz HIGH MAXIMUM STABLE GAIN: 15 dB @ 2 GHz LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of just 0.59 mm. Flat Lead Style for better RF performance. M04 NE663M04 DESCRIPTION NEC's NE663M04 is fabricated using NEC's UHS0 25 GHz fT wafer process. With a typical transition frequency of 19 GHz the NE663M04 is usable in applications from 100 MHz to 5 GHz. The NE663M04 provides excellent low voltage/low current performance. NEC's low profile/flat lead style "M04" package is ideal for today's portable wireless applications.
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