NE663M04 Datasheet | California Eastern Labs

.. NPN SILICON HIGH FREQUENCY TRANSISTOR Features - - - - - - HIGH GAIN BANDWIDTH: fT = 15 GHz HIGH POWER GAIN: IS21EI2 = 11 dB TYP at 2 GHz LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz HIGH IP3: NF = 27 dBm at 2 GHz HIGH MAXIMUM STABLE GAIN: 15 dB @ 2 GHz LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of just 0.59 mm. Flat Lead Style for better RF performance. M04 DESCRIPTION NEC's NE663M04 is fabricated using NEC's UHS0 25 GHz fT wafer process. With a typical transition frequency of 19 GHz the NE663M04 is usable in applications from 100 MHz to 5 GHz. The NE663M04 provides excellent low voltage/low current performance. NEC's low profile/flat lead style...