*
*
*
*
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* HIGH GAIN BANDWIDTH: fT = 15 GHz HIGH POWER GAIN: IS21EI2 = 11 dB TYP at 2 GHz LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz HIGH IP3: NF = 2.

from 100 MHz to 5 GHz. The NE663M04 provides excellent low voltage/low current performance. NEC's low profile/flat lead .

NEC's NE663M04 is fabricated using NEC's UHS0 25 GHz fT wafer process. With a typical transition frequency of 19 GHz the NE663M04 is usable in applications from 100 MHz to 5 GHz. The NE663M04 provides excellent low voltage/low current performance. NE.

NE661M04

NE661M04-T2

NE66219

NE662M04

NE662M16

NE662M16-A

NE662M16-T3

NE662M16-T3-A

NE664M04

NE664M04-A

NE664M04-T2-A

NE66719

NE600