Datasheet Summary
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NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR
Features
- -
- HIGH GAIN BANDWIDTH: fT = 21 GHz LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz HIGH MAXIMUM GAIN: 20 dB at f = 2 GHz
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE 19
1.6±0.1 0.8±0.1
1.6±0.1
NEC's NE66719 is fabricated using NEC's UHS0 25 GHz fT wafer process. This device is ideal for oscillator or low noise amplifier applications at 2 GHz and above.
0.75±0.05
0 to 0.1
0.15 -0.05
+0.1
0.3 -0
+0.1
DESCRIPTION
+0.1 -0
PIN CONNECTIONS 1. Emitter 2. Base .3. Collector
DataShee
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER EIAJ1 REGISTERED...