NE66719 transistor equivalent, necs npn silicon high frequency transistor.
*
*
* HIGH GAIN BANDWIDTH: fT = 21 GHz LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz HIGH MAXIMUM GAIN: 20 dB at f = 2 GHz
2
NE66719
OUTLINE DIMENSIONS (Units in m.
at 2 GHz and above.
0.5
3
1
0.75±0.05
0.6
0 to 0.1
0.15 -0.05
+0.1
0.3 -0
+0.1
DESCRIPTION
0.5
+0.1 -0
UB
.
0.5
+0.1 -0
UB
PIN CONNECTIONS 1. Emitter 2. Base DataSheet4U.com3. Collector
DataShee
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS ICBO PARAMETERS AND CONDITIONS Collector Cutoff Current at.
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