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NE66719 - NECs NPN SILICON HIGH FREQUENCY TRANSISTOR

Description

PIN CONNECTIONS 1.

Emitter 2.

Base DataSheet4U.com3.

Features

  • HIGH GAIN.

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Datasheet Details

Part number NE66719
Manufacturer California Eastern Labs
File Size 303.92 KB
Description NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
Datasheet download datasheet NE66719 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • HIGH GAIN BANDWIDTH: fT = 21 GHz LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz HIGH MAXIMUM GAIN: 20 dB at f = 2 GHz 2 NE66719 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 19 1.6±0.1 0.8±0.1 1.6±0.1 1.0 0.2 NEC's NE66719 is fabricated using NEC's UHS0 25 GHz fT wafer process. This device is ideal for oscillator or low noise amplifier applications at 2 GHz and above. 0.5 3 1 0.75±0.05 0.6 0 to 0.1 0.15 -0.05 +0.1 0.3 -0 +0.1 DESCRIPTION 0.5 +0.1 -0 UB PIN CONNECTIONS 1. Emitter 2. Base DataSheet4U.com3.