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NX5323EH Datasheet Laser Diode

Manufacturer: California Eastern Labs

Overview: LASER DIODE NX5323EH 1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER.

General Description

The NX5323EH is a 1 310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD.

This device is designed for application up to 1.25 Gb/s.

APPLICATION • FTTH PON (B-PON, G-PON, GE-PON 10 km) system

Key Features

  • Optical output power.
  • Low threshold current.
  • Differential Efficiency.
  • InGaAs monitor PIN-PD.
  • CAN package.
  • Focal point Po = 13.0 mW lth = 7 mA ηd = 0.5 W/A.
  • Wide operating temperature range TC =.
  • 40 to +85°C φ 5.6 mm 6.35 mm Document No. PL10741EJ01V0DS (1st edition) Date Published July 2009 NS 2009 NX5323EH.

NX5323EH Distributor