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NX5330SA Datasheet, California Eastern Labs

NX5330SA diode equivalent, laser diode.

NX5330SA Avg. rating / M : 1.0 rating-12

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NX5330SA Datasheet

Features and benefits


* High output power
* Long wavelength PO = 350 mW @ IFP = 1 000 mA*1
*C = 1 310 nm *1 Pulse Conditions: Pulse width (PW) = 10 s, Duty = 1% Document No. PL1.

Application

DESCRIPTION The NX5330SA is a 1 310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode. Reflectomet.

Description

The NX5330SA is a 1 310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode. Reflectometer (OTDR). This device is specified to operate under pulsed condition and designed for light source of Optical Time Domain FEATURES
* High.

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TAGS

NX5330SA
LASER
DIODE
NX5302
NX5304
NX5306
California Eastern Labs

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