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NX5330SA Datasheet Laser Diode

Manufacturer: California Eastern Labs

Overview: LASER DIODE NX5330SA 1 310 nm InGaAsP MQW-FP LASER DIODE FOR OTDR.

General Description

The NX5330SA is a 1 310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode.

Reflectometer (OTDR).

This device is specified to operate under pulsed condition and designed for light source of Optical Time Domain

Key Features

  • High output power.
  • Long wavelength PO = 350 mW @ IFP = 1 000 mA.
  • 1.
  • C = 1 310 nm.
  • 1 Pulse Conditions: Pulse width (PW) = 10 s, Duty = 1% Document No. PL10699EJ01V0DS (1st edition) Date Published January 2008 NS NX5330SA.

NX5330SA Distributor