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2N1613
SILICON NPN TRANSISTOR
w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N1613 is a silicon NPN epitaxial planar transistor designed for small signal general purpose switching applications.
MARKING: FULL PART NUMBER
TO-39 CASE
MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCER
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Power Dissipation (TC=25°C)
PD
Power Dissipation
PD
Operating and Storage Junction Temperature
TJ, Tstg
75 50 7.0 500 3.0 0.8 -65 to +200
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICBO
VCB=60V
IEBO
VEB=5.0V
BVCBO
IC=100μA
75
BVCER
IC=10mA, RBE=10Ω
50
BVEBO
IE=100μA
7.