Philips 2N1613
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later.| Part No. | 2N1613 |
|---|---|
| Datasheet | 2N1613 Download |
| Manufacturer |  Philips |
| Description | NPN medium power transistor |
| Buy | Stock & Price |
FEATURES
● Low current (max. 500 mA)● Low voltage (max. 50 V).
APPLICATIONS
● High-speed switching and amplification.DESCRIPTION
NPN medium power transistor in a TO-39 metal package. 3 1 handbook, halfpage 2 2N1613 PINNING PIN 1 2 3 emitter base collector, connected to caseDESCRIPTION
3 2 1 MAM317 Fig.1 Simplified outline (TO-39) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCEO ICM Ptot hFE fT PARAMETER collector-base voltage collector-emitter voltage peak collector current total power dissipation DC current gain transition frequency Tamb ≤ 25 °C IC = 150 mA; VCE = 10 V IC = 50 mA; VCE = 10 V; f = 100 MHz open base CONDITIONS open emitter − − − − 40 60 MIN. MAX. 75 50 1 0.8 120 − MHz V V A W UNIT 1997 Apr 11 2 Philips Semiconductors Product specification NPN medium power transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage colle...
