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2N1613

2N1613 is NPN medium power transistor manufactured by Philips Semiconductors.
2N1613 datasheet preview

2N1613 Details

Part number 2N1613
Datasheet 2N1613 Datasheet PDF (Download)
File Size 51.62 KB
Manufacturer Philips Semiconductors
Description NPN medium power transistor
2N1613 page 2 2N1613 page 3

2N1613 Overview

NPN medium power transistor in a TO-39 metal package. QUICK REFERENCE DATA SYMBOL VCBO VCEO ICM Ptot hFE fT PARAMETER collector-base voltage collector-emitter voltage peak collector current total power dissipation DC current gain transition frequency Tamb ≤ 25 °C IC = 150 mA; f = 100 MHz open base CONDITIONS open emitter − − − − 40 60 MIN.

2N1613 Key Features

  • Low current (max. 500 mA)
  • Low voltage (max. 50 V)

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