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2N1613

Manufacturer: Philips Semiconductors (now NXP Semiconductors)

2N1613 datasheet by Philips Semiconductors (now NXP Semiconductors).

2N1613 datasheet preview

2N1613 Datasheet Details

Part number 2N1613
Datasheet 2N1613_PhilipsSemiconductors.pdf
File Size 51.62 KB
Manufacturer Philips Semiconductors (now NXP Semiconductors)
Description NPN medium power transistor
2N1613 page 2 2N1613 page 3

2N1613 Overview

NPN medium power transistor in a TO-39 metal package. QUICK REFERENCE DATA SYMBOL VCBO VCEO ICM Ptot hFE fT PARAMETER collector-base voltage collector-emitter voltage peak collector current total power dissipation DC current gain transition frequency Tamb ≤ 25 °C IC = 150 mA; f = 100 MHz open base CONDITIONS open emitter − − − − 40 60 MIN.

2N1613 Key Features

  • Low current (max. 500 mA)
  • Low voltage (max. 50 V)

2N1613 from other manufacturers

View 2N1613 datasheet index

Brand Logo Part Number Description Other Manufacturers
STMicroelectronics Logo 2N1613 SWITCHES AND UNIVERSAL AMPLIFIERS STMicroelectronics
Fairchild Logo 2N1613 NPN Small Signal General Purpose Amplifiers Fairchild
Microsemi Corporation Logo 2N1613 NPN LOW POWER SILICON TRANSISTOR Microsemi Corporation
VPT Logo 2N1613 NPN Low Power Silicon Transistor VPT
Comset Semiconductor Logo 2N1613 Silicon Planar Epitaxial Transistors Comset Semiconductor
Philips Semiconductors (now NXP Semiconductors) logo - Manufacturer

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2N1613 Distributor

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