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2N1613 Datasheet PDF

Comset Semiconductor 2N1613

The 2N1613 and 2N1711 are NPN transistors mounted in TO-39 metal package with the collector connected to the case . They are designed for use in high-performance amplifier, oscillator and switching circuits. The 2N1711 is also used to advantage in amplifiers where low noise is an important factor.
Part No. 2N1613
Datasheet 2N1613 Download
Manufacturer
Comset Semiconductor
Description Silicon Planar Epitaxial Transistors
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2N1613 datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

Symbol VCBO VCER VEBO IC ICM IBM PD TJ TStg Ratings Collector-Base Voltage Collector-Emitter Voltage (RBE = 10Ω) Emitter-Base Voltage Collector Current Peak Collector Current Peak Base Current Total Power Dissipation Junction Temperature Storage Temperature range Value 75 50 7 5 1 200 3 1.7 0.8 200 -65 to +150 Unit V V V mA A mA W W W °C °C @ Tcase= 25° @ Tcase= 100° @ Tamb= 25° THERMAL CHARACTERISTICS Symbol RthJ-c RthJ-amb Ratings Thermal Resistance, Junction-case Thermal Resistance, Junction-ambient Value 58 219 Unit °C/ W °C/ W COMSET SEMICONDUCTORS 1/3 Datasheet pdf - NPN 2N1613 – 2N1711

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted Symbol ICBO IEB0 VCBO Ratings Collector Cutoff Current Emitter Cutoff Current Test Condition(s) VCE=60 V, IE=0 VCE=60 V, IE=0 Tamb = 150°C VEB=5 V VEB=5 V IC=0.1 mA IE=100 µA , IC=0 IC=150 mA , IB=15 mA IC=150 mA, IB=15 mA IC=0.1 mA, VCE=10 V IC=10 mA, VCE=10 V IC=150 mA, VCE=10 V IC=500 mA, VCE=10 V IC=10 µA, VCE=1...
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