2N1613 - NPN LOW POWER SILICON TRANSISTOR

Microsemi Corporation

Datasheet Details

Part number	2N1613
Manufacturer	Microsemi Corporation
File Size	56.28 KB
Description	NPN LOW POWER SILICON TRANSISTOR
Datasheet	2N1613 Datasheet
Additional preview pages of the 2N1613 datasheet.

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TECHNICAL DATA NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/181 Devices 2N718A 2N1613 2N1613L Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C (1) Symbol VCEO VCBO VEBO IC Value 30 75 7.0 500 0.5 0.8 1.8 3.0 -55 to +175 Max. Unit Vdc Vdc Vdc mAdc TO-18 (TO-206AA)* 2N718A 2N718A 2N1613, L @ TC = +250C (2) 2N718A 2N1613, L Operating & Storage Junction Temperature Range PT W TJ, Tstg Symbol 0 C THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Unit 0 2N718A 97 C/W RθJC 2N1613, L 58 1) Derate linearly 4.57 mW/0C for 2N1613, L and 2.85 mW/0C for 2N718A for TA > +250C 2) Derate linearly 17.

Published: May 16, 2007 |